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	Design and fabrication of a novel Si MOS pressure microsensor
	Zhang Yan-hong ; Liu Li-tian ; Zhang Zhao-hua ; Lin Hui-wang
	2010-05-07 ; 2010-05-07
关键词	Practical/ MOSFET piezoresistive devices pressure sensors semiconductor materials silicon/ MOS pressure microsensor consumption electronic product IC fabrication piezoresistors MOSFET stress sensitive phenomenon/ B7230 Sensing devices and transducers B2560R Insulated gate field effect transistors B7320V Pressure and vacuum measurement
中文摘要	Abstract:With the rapid expansion of consumption electronic product markets and emerging of new technologies, such as automotive tire pressure monitoring system (TPMS) , biomedicine, aerospace and so on, great research efforts have been motivated again in developing high-performance pressure microsensors with simpler IC fabrication, higher reliability and lower costs. Traditional piezoresistive pressure sensor adopts the piezoresistors to transform pressure into electric signal. Similar to the piezoresistors, MOSFET has stress sensitive phenomenon, in which the source current changes with the stress in channel region. Based on this effect, a novel Si MOS pressure microsensor is proposed. Compared with the traditional piezoresistive pressure sensor, sensitivity of the new sensor is improved significantly, and the power is decreased. It also features good linearity and stability with simple fabrication process.
语种	中文 ; 中文
出版者	Southeast University ; China
内容类型	期刊论文
源URL	[http://hdl.handle.net/123456789/16416]
专题	清华大学
推荐引用方式 GB/T 7714	Zhang Yan-hong,Liu Li-tian,Zhang Zhao-hua,et al. Design and fabrication of a novel Si MOS pressure microsensor[J],2010, 2010.
APA	Zhang Yan-hong,Liu Li-tian,Zhang Zhao-hua,&Lin Hui-wang.(2010).Design and fabrication of a novel Si MOS pressure microsensor..
MLA	Zhang Yan-hong,et al."Design and fabrication of a novel Si MOS pressure microsensor".(2010).

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