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	Real-time and full-field deflection measurement of thin films electroplated on the single crystal silicon wafers
	Xide Li ; Cheng Wei
	2010-05-07 ; 2010-05-07
关键词	Practical Experimental/ bending electronic speckle pattern interferometry electronics packaging elemental semiconductors micromechanical devices piezoelectric actuators semiconductor thin films silicon Young's modulus/ single crystal silicon wafers speckle microinterferometer electroplated thin films piezo-actuated micro-loading unit thin film deflection loading force Young moduli load-deflection curves/ A6855 Thin film growth, structure, and epitaxy A8140J Elasticity and anelasticity A6220D Elasticity, elastic constants A8140L Deformation, plasticity and creep A6220F Deformation and plasticity A4240K Holographic interferometry other holographic techniques A0710C Micromechanical devices and systems B2520C Elemental semiconductors B4350 Holography B0170J Product packaging B2860A Piezoelectric devices B2575 Micromechanical device technology
中文摘要	A special speckle microinterferometer has been developed to test the mechanical properties of thin films electroplated on the single crystal silicon wafer. A piezo-actuated micro-loading unit is synchronized with the microinterferometer to measure thin film deflection in bending with an accuracy of sub-micrometers. All of the film specimens were microfabricated to be the type of microbridge samples. They are made of Cu and NiFe, the sizes from 1102.9 mu m to 213.7 mu m long, 491.0 mu m to 9.7 mu m wide. The corresponding thicknesses are 9.4 mu m and 7.6 mu m, respectively. Deflections of the microbridge samples can be measured full-field and real-time by using the microinterferometer and no patterning or marking of the specimen surface is needed. The loading force is directly measured using a miniature load cell. The Young's moduli are calculated for both material and sample size from the load-deflection curves. Test techniques, procedures and factors which affect on the deflection measurements are briefly presented along with detailed analyzes of the results.
语种	英语 ; 英语
出版者	Trans Tech Publications ; Switzerland
内容类型	期刊论文
源URL	[http://hdl.handle.net/123456789/15770]
专题	清华大学
推荐引用方式 GB/T 7714	Xide Li,Cheng Wei. Real-time and full-field deflection measurement of thin films electroplated on the single crystal silicon wafers[J],2010, 2010.
APA	Xide Li,&Cheng Wei.(2010).Real-time and full-field deflection measurement of thin films electroplated on the single crystal silicon wafers..
MLA	Xide Li,et al."Real-time and full-field deflection measurement of thin films electroplated on the single crystal silicon wafers".(2010).

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