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	Rashba spin-orbit effect on shot noise in ferromagnetic/semiconductor/ferromagnetic heterojunctions
	Zhang, YT ; Guo, Y ; Li, YC
	2010-05-06 ; 2010-05-06
关键词	QUANTUM DOTS SEMICONDUCTOR MAGNETIZATION INJECTION HETEROSTRUCTURE SPECTROSCOPY SPINTRONICS Physics, Condensed Matter
中文摘要	Using the scattering approach, shot noise in ferromagnetic/semiconductor/ferromagnetic heterjunctions in the presence of Rashba spin-orbit interaction has been studied theoretically. The quantum size effect, degree of spin-polarization, and Rashba spin-orbit interaction are considered simultaneously. The results indicate that the Fano factors for spin-polarized electrons oscillate strongly due to the influence not only of the Rashba spin-orbit coupling but also of the length of the semiconductor layer. For a certain length of semiconductor, the Fano factors can be determined by the strength of the Rashba spin-orbit coupling. Further, it is found that the higher the degree of spin-polarization, the larger the Fano factors. These results may be useful in the measurement of Rashba spin-orbit coupling via shot noise.
语种	英语 ; 英语
出版者	WILEY-V C H VERLAG GMBH ; WEINHEIM ; PO BOX 10 11 61, D-69451 WEINHEIM, GERMANY
内容类型	期刊论文
源URL	[http://hdl.handle.net/123456789/15585]
专题	清华大学
推荐引用方式 GB/T 7714	Zhang, YT,Guo, Y,Li, YC. Rashba spin-orbit effect on shot noise in ferromagnetic/semiconductor/ferromagnetic heterojunctions[J],2010, 2010.
APA	Zhang, YT,Guo, Y,&Li, YC.(2010).Rashba spin-orbit effect on shot noise in ferromagnetic/semiconductor/ferromagnetic heterojunctions..
MLA	Zhang, YT,et al."Rashba spin-orbit effect on shot noise in ferromagnetic/semiconductor/ferromagnetic heterojunctions".(2010).

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