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	Physical origin of hydrogen-adsorption-induced metallization of the SiC surface: n-type doping via formation of hydrogen bridge bond
	Chang, H ; Wu, J ; Gu, BL ; Liu, F ; Duan, WH
	2010-05-06 ; 2010-05-06
关键词	GENERALIZED GRADIENT APPROXIMATION SILICON-CARBIDE Physics, Multidisciplinary
中文摘要	We perform first-principles calculations to explore the physical origin of hydrogen-induced semiconductor surface metallization observed in beta-SiC(001)-3x2 surface. We show that the surface metallization arises from a novel mechanism of n-type doping of surface band via formation of hydrogen bridge bonds (i.e., Si-H-Si complex). The hydrogen strengthens the weak Si-Si dimers in the subsurface by forming hydrogen bridge bonds, and donates electron to the surface conduction band.
语种	英语 ; 英语
出版者	AMERICAN PHYSICAL SOC ; COLLEGE PK ; ONE PHYSICS ELLIPSE, COLLEGE PK, MD 20740-3844 USA
内容类型	期刊论文
源URL	[http://hdl.handle.net/123456789/15126]
专题	清华大学
推荐引用方式 GB/T 7714	Chang, H,Wu, J,Gu, BL,et al. Physical origin of hydrogen-adsorption-induced metallization of the SiC surface: n-type doping via formation of hydrogen bridge bond[J],2010, 2010.
APA	Chang, H,Wu, J,Gu, BL,Liu, F,&Duan, WH.(2010).Physical origin of hydrogen-adsorption-induced metallization of the SiC surface: n-type doping via formation of hydrogen bridge bond..
MLA	Chang, H,et al."Physical origin of hydrogen-adsorption-induced metallization of the SiC surface: n-type doping via formation of hydrogen bridge bond".(2010).

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