| Hydrogen adsorption induced metallization of SiC surface | |
| Chang Hao ; Yang Li ; Wang Li-Jun ; Wu Jian ; Duan Wen-Hui | |
| 2010-05-06 ; 2010-05-06 | |
| 关键词 | Theoretical or Mathematical/ adsorption conduction bands hydrogen hydrogen bonds metallisation silicon compounds wide band gap semiconductors/ hydrogen adsorption induced metallization beta -SiC(001)-3*2 surface surface metallization surface band hydrogen bridgebonds Si-Si dimers surface conduction band SiC H/sub 2// A6845D Adsorption and desorption kinetics evaporation and condensation A7320A Surface states, band structure, electron density of states/ SiC/sur Si/sur C/sur SiC/bin Si/bin C/bin H2/ads H/ads H2/el H/el |
| 中文摘要 | We report our recent theoretical studies on the hydrogen-induced semiconductor surface metallization observed in beta -SiC(001)-3*2 surface. We show that the surface metallization arises from a novel mechanism of n-type doping of surface band via formation of hydrogen bridgebonds (i.e., Si-H-Si complex) . The hydrogen strengthens the weak Si-Si dimers in the subsurface by forming hydrogen bridge bonds, and donates electron to the surface conduction band. |
| 语种 | 中文 ; 中文 |
| 出版者 | Chinese Phys. Soc ; China |
| 内容类型 | 期刊论文 |
| 源URL | [http://hdl.handle.net/123456789/14406]  |
| 专题 | 清华大学 |
| 推荐引用方式 GB/T 7714 | Chang Hao,Yang Li,Wang Li-Jun,et al. Hydrogen adsorption induced metallization of SiC surface[J],2010, 2010. |
| APA | Chang Hao,Yang Li,Wang Li-Jun,Wu Jian,&Duan Wen-Hui.(2010).Hydrogen adsorption induced metallization of SiC surface.. |
| MLA | Chang Hao,et al."Hydrogen adsorption induced metallization of SiC surface".(2010). |
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