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	Study of total ionizing dose radiation effects on enclosed gate transistors in a commercial CMOS technology
	Li Dong-Mei ; Wang Zhi-Hua ; Huangfu Li-Ying ; Gou Qiu-Jing
	2010-05-06 ; 2010-05-06
关键词	MOS transistors radiation effects total dose layout OXIDE ISOLATION STRUCTURES CHANNEL EDGES FIELD DEVICES ENVIRONMENTS DEPENDENCE CIRCUITS HARDNESS ENERGY CHARGE Physics, Multidisciplinary
中文摘要	This paper studies the total ionizing dose radiation effects on MOS (metal-oxide-semiconductor) transistors with normal and enclosed gate layout in a standard commercial CMOS (compensate MOS) bulk process. The leakage current, threshold voltage shift, and transconductance of the devices were monitored before and after gamma-ray irradiation. The parameters of the devices with different layout under different bias condition during irradiation at different total dose are investigated. The results show that the enclosed layout not only effectively eliminates the leakage but also improves the performance of threshold voltage and transconductance for NMOS (n-type channel MOS) transistors. The experimental results also indicate that analogue bias during irradiation is the worst case for enclosed gate NMOS. There is no evident different behaviour observed between normal PMOS (p-type channel MOS) transistors and enclosed gate PMOS transistors.
语种	英语 ; 英语
出版者	IOP PUBLISHING LTD ; BRISTOL ; DIRAC HOUSE, TEMPLE BACK, BRISTOL BS1 6BE, ENGLAND
内容类型	期刊论文
源URL	[http://hdl.handle.net/123456789/11787]
专题	清华大学
推荐引用方式 GB/T 7714	Li Dong-Mei,Wang Zhi-Hua,Huangfu Li-Ying,et al. Study of total ionizing dose radiation effects on enclosed gate transistors in a commercial CMOS technology[J],2010, 2010.
APA	Li Dong-Mei,Wang Zhi-Hua,Huangfu Li-Ying,&Gou Qiu-Jing.(2010).Study of total ionizing dose radiation effects on enclosed gate transistors in a commercial CMOS technology..
MLA	Li Dong-Mei,et al."Study of total ionizing dose radiation effects on enclosed gate transistors in a commercial CMOS technology".(2010).

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