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	Overshoot phenomena in PIN diode under EMP with fast rise time
	Zhou Huai-an ; Du Zheng-wei ; Gong Ke
	2010-05-06 ; 2010-05-06
关键词	Practical Theoretical or Mathematical/ electromagnetic interference electromagnetic pulse numerical analysis p-i-n diodes semiconductor device models/ interference effect electromagnetic pulse PIN diode numerical modeling semiconductor equations drift-diffusion model current density charge density overshoot current/ B5230 Electromagnetic compatibility and interference B2560H Junction and barrier diodes B2560B Semiconductor device modelling and equivalent circuits B0290Z Other numerical methods
中文摘要	To study the interference effect of the electromagnetic pulse (EMP) on the PIN diode, the one-dimensional numerical modeling is carried out, which solves the semiconductor equations based on the drift-diffusion model. By observing the variation of the distribution of current density and charge density in the PIN diode during the pulse, the occurrence of an overshoot current under a positive or negative voltage is analyzed. The results show that the overshoot current is due to the capacitive performance of PIN diode under high frequency. Whether the pulse voltage is positive or negative, the magnitude of the overshoot current is increasing with less rise time or higher initial positive bias voltage.
语种	中文 ; 中文
出版者	Nucl. Soc. China ; China
内容类型	期刊论文
源URL	[http://hdl.handle.net/123456789/11157]
专题	清华大学
推荐引用方式 GB/T 7714	Zhou Huai-an,Du Zheng-wei,Gong Ke. Overshoot phenomena in PIN diode under EMP with fast rise time[J],2010, 2010.
APA	Zhou Huai-an,Du Zheng-wei,&Gong Ke.(2010).Overshoot phenomena in PIN diode under EMP with fast rise time..
MLA	Zhou Huai-an,et al."Overshoot phenomena in PIN diode under EMP with fast rise time".(2010).

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