γ-辐照对纯Y2SiO5和Eu^3＋：Y2SiO5晶体光谱性能的影响

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	γ-辐照对纯Y2SiO5和Eu^3＋：Y2SiO5晶体光谱性能的影响; Effect of Gamma Irradiation on the Spectral Properties of Undoped and Eu³⁺-Doped Y₂SiO₅ Single Crystals
	庞辉勇 ; 赵广军 ; 介明印 ; 朱江 ; 何晓明 ; 徐军
刊名	光学学报
	2005
卷号	25 期号:12 页码:1655
关键词	光学材料 optical material 晶体 crystal 吸收光谱 absorption spectra 辐照 irradiation 色心 color center
ISSN号	0253-2239
其他题名	Effect of Gamma Irradiation on the Spectral Properties of Undoped and Eu³⁺-Doped Y₂SiO₅ Single Crystals
中文摘要	研究了γ-辐照前后纯Y2SiO5和Eu^3＋掺杂的Y2SiO5晶体吸收光谱的变化，辐照后，未退火和氢气退火的纯Y2SiO5晶体在260-270nm和320nm波段产生了附加吸收峰，分别是由F心和O^-心的吸收引起的；经过空气退火的纯YSO晶体中，由于消除了氧空位，因此辐照后没有出现色心吸收峰。在Eu^3＋；Y2SiO5晶体中，不但有相同的F心和O心吸收峰，而且还有Eu^2＋离子在300nm和390nm的吸收峰。随着辐照剂量的增加，色心附加吸收峰增强。空气退火能减少Eu^3＋：Y2SiO5晶体中的色心，而氢; The absorption spectra of undoped and Eu3+-doped Y2SiO5 single crystals before and after gamma irradiation were studied. Additional absorption peaks at 260～270 nm and 320 nm were observed in irradiated Y2SiO5 crystal with no annealing or hydrogen-annealing, which were respectively caused by F centers and O- centers. Owing to the abserence of oxygen vacancy, there was no absorption peaks of color centers in air-annealed Y2SiO5 crystal. Additional absorption band of Eu2+ ions, which peaked at 300 nm and 390 nm, were produced in irradiated and H2-annealed Eu3+∶Y2SiO5 crystal, except absorption bands of F centers and O- centers. Additional absorption increased with irradiation dose increasing. Air-annealing could decrease the concentration of color centers, and the H2-annealing could increase it.
学科主题	光学材料;晶体
分类号	O782
收录类别	ei
语种	中文
公开日期	2009-09-24
内容类型	期刊论文
源URL	[http://ir.siom.ac.cn/handle/181231/5435]
专题	上海光学精密机械研究所_激光与光电子功能材料研发中心
推荐引用方式 GB/T 7714	庞辉勇,赵广军,介明印,等. γ-辐照对纯Y2SiO5和Eu^3＋：Y2SiO5晶体光谱性能的影响, Effect of Gamma Irradiation on the Spectral Properties of Undoped and Eu³⁺-Doped Y₂SiO₅ Single Crystals[J]. 光学学报,2005,25(12):1655, 1658.
APA	庞辉勇,赵广军,介明印,朱江,何晓明,&徐军.(2005).γ-辐照对纯Y2SiO5和Eu^3＋：Y2SiO5晶体光谱性能的影响.光学学报,25(12),1655.
MLA	庞辉勇,et al."γ-辐照对纯Y2SiO5和Eu^3＋：Y2SiO5晶体光谱性能的影响".光学学报 25.12(2005):1655.