Ridge optical waveguide in an Er3+/Yb3+ co-doped phosphate glass produced by He+ ion implantation combined with Ar+ ion beam etching
Tan Yang ; Chen Feng ; Hu Li-Li ; Xing Peng-Fei ; Chen Yan-Xue ; Wang Xue-Lin ; Wang Ke-Ming
刊名j. phys. d-appl. phys.
2007
卷号40期号:21页码:6545
关键词AMPLIFIERS EXCHANGE FABRICATION PROFILES LINBO3 INDEX
ISSN号0022-3727
中文摘要this paper reports on the fabrication and characterization of a ridge optical waveguide in an er3+/yb3+ co-doped phosphate glass. the he+ ion implantation (at energy of 2.8 mev) is first applied onto the sample to produce a planar waveguide substrate, and then ar+ ion beam etching (at energy of 500 ev) is carried out to construct rib stripes on the sample surface that has been deposited by a specially designed photoresist mask. according to a reconstructed refractive index profile of the waveguide cross section, the modal distribution of the waveguide is simulated by applying a computer code based on the beam propagation method, which shows reasonable agreement with the experimentally observed waveguide mode by using the end-face coupling method. simulation of the incident he ions at 2.8 mev penetrating into the er3+/yb3+ co-doped phosphate glass substrate is also performed to provide helpful information on waveguide formation.
学科主题光学材料;光学玻璃
收录类别EI
语种英语
WOS记录号WOS:000250605300015
公开日期2009-09-24
内容类型期刊论文
源URL[http://ir.siom.ac.cn/handle/181231/4955]  
专题上海光学精密机械研究所_高功率激光单元技术研发中心
推荐引用方式
GB/T 7714
Tan Yang,Chen Feng,Hu Li-Li,et al. Ridge optical waveguide in an Er3+/Yb3+ co-doped phosphate glass produced by He+ ion implantation combined with Ar+ ion beam etching[J]. j. phys. d-appl. phys.,2007,40(21):6545, 6548.
APA Tan Yang.,Chen Feng.,Hu Li-Li.,Xing Peng-Fei.,Chen Yan-Xue.,...&Wang Ke-Ming.(2007).Ridge optical waveguide in an Er3+/Yb3+ co-doped phosphate glass produced by He+ ion implantation combined with Ar+ ion beam etching.j. phys. d-appl. phys.,40(21),6545.
MLA Tan Yang,et al."Ridge optical waveguide in an Er3+/Yb3+ co-doped phosphate glass produced by He+ ion implantation combined with Ar+ ion beam etching".j. phys. d-appl. phys. 40.21(2007):6545.
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