Crystal growth and scintillation properties of undoped and Ce3+-doped GdI3 crystals

CORC > 上海硅酸盐研究所 > 中国科学院上海硅酸盐研究所 > 中试基地 > 期刊论文

	Crystal growth and scintillation properties of undoped and Ce3+-doped GdI3 crystals
	Ye, Le 1,2; Li, Huanying 2; Wang, Chao 2; Shi, Jian 2; Chen, Xiaofeng 2; Wang, Zhongqing 3; Huang, Yuefeng 3; Xu, Jiayue 1; Ren, Guohao 2
刊名	OPTICAL MATERIALS
	2017-02-01
卷号	64 页码:121-125
关键词	Scintillator GdI3 Single crystal growth Bridgman technique Ce3+ luminescence
英文摘要	The growth and scintillation properties of undoped and Ce3+-doped GdI3 crystals were reported in this paper. These GdI3:chi%Ce (chi = 0, 1, 2) crystals were grown by the vertical Bridgman growth technique in evacuated quartz crucibles. X-ray excited optical luminescence spectra of GdI3:Ce exhibit a broad emission band (450 nm-650 nm) peaking at 520 nm corresponding to 5d(1)-> 4f(1) transition of Ce3+ while the undoped GdI3 crystal consists of a broad band (400 nm-600 nm) and several sharp lines peaking at 462 nm, 482 nm, 492 nm, 549 nm, 579 nm owing to the impurities ions and defects. The excitation spectra of Ce3+ doped GdI3 consist of two broad bands between 300 nm and 500 nm corresponding to 4f(1)-> 5d(1) absorption of Ce3+. The other absorption peaking at 262 nm in the spectrum of GdI3:2%Ce is assigned to band-to-band exciton transition. The excitation spectrum of undoped GdI3 contains a flat absorption band from 330 to 370 nm and a broad band between 390 and 450 nm peaking at 414 nm corresponding to the absorption of the unintentionally doped Ce3+, Dy3+, Ho3+ impurities and other defects. The emission spectrum of undoped GdI3 under 332 nm excitation has the identical line peaks with the spectrum measured under X-ray excitation. The emission spectra of GdI3:2%Ce and GdI3:1%Ce show a broad band in the range of 450-750 nm with the maximum at 550 nm corresponding to 5d(1)-> 4f(1) transitions of Ce3+ ion. The GdI3, GdI3:1%Ce and GdI3:2%Ce show fast principle decay time constant 73 ns, 69 ns and 58 ns respectively, besides, the undoped also shows a slow decay constant 325 ns which doesn't appear in Ce3+-doped GdI3 crystal. The energy resolutions of GdI3:chi%Ce (chi = 1, 2) measured at 662 KeV are about 3%-5% and the undoped GdI3 is 13.3%. (C) 2016 Elsevier B.V. All rights reserved.
WOS标题词	Science & Technology ; Technology ; Physical Sciences
类目[WOS]	Materials Science, Multidisciplinary ; Optics
研究领域[WOS]	Materials Science ; Optics
关键词[WOS]	ENERGY ; EMISSION
收录类别	SCI
语种	英语
WOS记录号	WOS:000394635200020
内容类型	期刊论文
源URL	[http://ir.sic.ac.cn/handle/331005/23705]
专题	上海硅酸盐研究所_中试基地_期刊论文
作者单位	1.Shanghai Inst Technol, Sch Mat Sci & Engn, Shanghai 200235, Peoples R China 2.Chinese Acad Sci, Shanghai Inst Ceram, Shanghai 200050, Peoples R China 3.Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai 201800, Peoples R China
推荐引用方式 GB/T 7714	Ye, Le,Li, Huanying,Wang, Chao,et al. Crystal growth and scintillation properties of undoped and Ce3+-doped GdI3 crystals[J]. OPTICAL MATERIALS,2017,64:121-125.
APA	Ye, Le.,Li, Huanying.,Wang, Chao.,Shi, Jian.,Chen, Xiaofeng.,...&Ren, Guohao.(2017).Crystal growth and scintillation properties of undoped and Ce3+-doped GdI3 crystals.OPTICAL MATERIALS,64,121-125.
MLA	Ye, Le,et al."Crystal growth and scintillation properties of undoped and Ce3+-doped GdI3 crystals".OPTICAL MATERIALS 64(2017):121-125.