Resonant level-induced high thermoelectric response in indium-doped GeTe

CORC > 上海硅酸盐研究所 > 中国科学院上海硅酸盐研究所 > 高性能陶瓷和超微结构国家重点实验室 > 期刊论文

	Resonant level-induced high thermoelectric response in indium-doped GeTe
	Wu, Lihua 1; Li, Xin 1,2; Wang, Shanyu 3,4; Zhang, Tiansong ; Yang, Jiong 1; Zhang, Wenqing 1; Chen, Lidong 4; Yang, Jihui 3
刊名	NPG ASIA MATERIALS
	2017
卷号	9
英文摘要	Resonant levels are promising for high-performance single-phase thermoelectric materials. Recently, phase-change materials have attracted much attention for energy conversion applications. As the energetic position of resonant levels could be temperature dependent, searching for dopants in phase-change materials, which can introduce resonant levels in both low and high temperature phases, remains challenging. In this study, possible distortions of the electronic density of states due to group IIIA elements (Ga, In, Tl) in GeTe are theoretically investigated. Resonant levels induced by indium dopants in both rhombohedral and cubic phase GeTe have been demonstrated. The experimental Seebeck coefficients of InxGe1-xTe exhibit a large enhancement compared with those observed for other prior dopants. Indium dopants reduce the defect concentrations in GeTe, and thus, they lower the carrier concentrations and suppress the electronic component of the total thermal conductivity. The enhanced Seebeck coefficient, together with the suppressed thermal conductivity, leads to a reasonably high ZT of 1.3 at a temperature near 355 degrees C in In0.02Ge0.98Te. The corresponding average ZT is enhanced by similar to 70% across the entire temperature range of the rhombohedral and cubic phases. These observations indicate that indium-doped GeTe is a promising base material for achieving an even higher thermoelectric performance.
WOS标题词	Science & Technology ; Technology
类目[WOS]	Materials Science, Multidisciplinary
研究领域[WOS]	Materials Science
关键词[WOS]	PERFORMANCE BULK THERMOELECTRICS ; AUGMENTED-WAVE METHOD ; THERMAL-CONDUCTIVITY ; GERMANIUM TELLURIDE ; PHASE-SEPARATION ; PHONON-GLASS ; ALLOYS ; ENHANCEMENT ; ELECTRON ; FIGURE
收录类别	SCI
语种	英语
WOS记录号	WOS:000393795000004
内容类型	期刊论文
源URL	[http://ir.sic.ac.cn/handle/331005/23460]
专题	上海硅酸盐研究所_高性能陶瓷和超微结构国家重点实验室_期刊论文
作者单位	1.Shanghai Univ, Mat Genome Inst, 99 Shangda Rd,E-433, Shanghai 200444, Peoples R China 2.Shanghai Univ, Coll Sci, Dept Phys, Shanghai, Peoples R China 3.Univ Washington, Dept Mat Sci & Engn, 315 Roberts Hall,Box 352120, Seattle, WA 98195 USA 4.Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai, Peoples R China
推荐引用方式 GB/T 7714	Wu, Lihua,Li, Xin,Wang, Shanyu,et al. Resonant level-induced high thermoelectric response in indium-doped GeTe[J]. NPG ASIA MATERIALS,2017,9.
APA	Wu, Lihua.,Li, Xin.,Wang, Shanyu.,Zhang, Tiansong.,Yang, Jiong.,...&Yang, Jihui.(2017).Resonant level-induced high thermoelectric response in indium-doped GeTe.NPG ASIA MATERIALS,9.
MLA	Wu, Lihua,et al."Resonant level-induced high thermoelectric response in indium-doped GeTe".NPG ASIA MATERIALS 9(2017).