Opacity studies of silicon in radiatively heated plasma | |
Wei, H. G.1,3; Shi, J. R.1; Zhao, G.1; Zhang, Yi2; Dong, Quan-Li2; Li, Yu-Tong2; Wang, Shou-Jun2; Zhang, Jie2,6; Liang, Zuotang3; Zhang, Ji-Yan4 | |
刊名 | ASTROPHYSICAL JOURNAL |
2008-08-10 | |
卷号 | 683期号:1页码:577-583 |
关键词 | atomic data methods : laboratory plasmas X-rays : general |
英文摘要 | Measurements of the opacity of silicon at high temperature and high density are reported. A silicon dioxide foam was heated by eight nanosecond laser beams while a backlighter X-ray source was produced with a picosecond laser. Absorptions of the 1-2 transitions of Si XII through Si VI were observed in the wavelength range from 6.6 to 7.1 angstrom. The experimental results are simulated with theoretical calculations under local thermodynamic equilibrium using a detailed level accounting model and can be reproduced in general when the effects of the oxygen in the SiO2 are taken into account. |
收录类别 | SCI |
语种 | 英语 |
WOS记录号 | WOS:000258296100049 |
内容类型 | 期刊论文 |
源URL | [http://ir.bao.ac.cn/handle/114a11/7382] |
专题 | 国家天文台_光学天文研究部 |
作者单位 | 1.Chinese Acad Sci, Natl Astron Observ, Beijing 100012, Peoples R China 2.Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Lab Opt Phys, Beijing 100080, Peoples R China 3.Shandong Univ, Dept Phys, Jinan 250100, Peoples R China 4.China Acad Engn Phys, Res Ctr Laser Fus, Mianyang 621900, Peoples R China 5.Osaka Univ, Inst Laser Engn, Suita, Osaka 5650871, Japan 6.Jiao Tong Univ, Dept Phys, Shanghai 200030, Peoples R China |
推荐引用方式 GB/T 7714 | Wei, H. G.,Shi, J. R.,Zhao, G.,et al. Opacity studies of silicon in radiatively heated plasma[J]. ASTROPHYSICAL JOURNAL,2008,683(1):577-583. |
APA | Wei, H. G..,Shi, J. R..,Zhao, G..,Zhang, Yi.,Dong, Quan-Li.,...&Takabe, Hideaki.(2008).Opacity studies of silicon in radiatively heated plasma.ASTROPHYSICAL JOURNAL,683(1),577-583. |
MLA | Wei, H. G.,et al."Opacity studies of silicon in radiatively heated plasma".ASTROPHYSICAL JOURNAL 683.1(2008):577-583. |
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