High Mobility MoS2 Transistor with Low Schottky Barrier Contact by Using Atomic Thick h-BN as a Tunneling Layer

CORC > 苏州纳米技术与纳米仿生研究所 > 中国科学院苏州纳米技术与纳米仿生研究所 > 纳米研究国际实验室 > 张凯团队

	High Mobility MoS2 Transistor with Low Schottky Barrier Contact by Using Atomic Thick h-BN as a Tunneling Layer
	Wang, JL; Yao, Q; Huang, CW; Zou, XM; Liao, L; Chen, SS; Fan, ZY; Zhang, K(张凯); Wu, W; Xiao, XH
刊名	ADVANCED MATERIALS
	2016
卷号	28 期号:37
通讯作者	Liao, L
英文摘要	High-performance MoS2 transistors are developed using atomic hexagonal boron nitride as a tunneling layer to reduce the Schottky barrier and achieve low contact resistance between metal and MoS2. Benefiting from the ultrathin tunneling layer within 0.6 nm, the Schottky barrier is significantly reduced from 158 to 31 meV with small tunneling resistance.
关键词[WOS]	FIELD-EFFECT TRANSISTORS ; MOLYBDENUM-DISULFIDE ; MONOLAYER MOS2 ; GRAPHENE ; HETEROSTRUCTURE ; TRANSPORT ; DEFECT
收录类别	SCI ; EI
语种	英语
WOS记录号	WOS:000386103600028
内容类型	期刊论文
源URL	[http://ir.sinano.ac.cn/handle/332007/4679]
专题	苏州纳米技术与纳米仿生研究所_纳米研究国际实验室_张凯团队
推荐引用方式 GB/T 7714	Wang, JL,Yao, Q,Huang, CW,et al. High Mobility MoS2 Transistor with Low Schottky Barrier Contact by Using Atomic Thick h-BN as a Tunneling Layer[J]. ADVANCED MATERIALS,2016,28(37).
APA	Wang, JL.,Yao, Q.,Huang, CW.,Zou, XM.,Liao, L.,...&Wu, WW.(2016).High Mobility MoS2 Transistor with Low Schottky Barrier Contact by Using Atomic Thick h-BN as a Tunneling Layer.ADVANCED MATERIALS,28(37).
MLA	Wang, JL,et al."High Mobility MoS2 Transistor with Low Schottky Barrier Contact by Using Atomic Thick h-BN as a Tunneling Layer".ADVANCED MATERIALS 28.37(2016).