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	Comparative study of the differential resistance of GaAs- and GaN-based laser diodes
	Li, X; Liu, ZS; Zhao, DG; Jiang, DS; Chen, P; Zhu, JJ; Yang, J; Le, LC; Liu, W; He, XG
刊名	JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
	2016
卷号	34期号:4
通讯作者	Zhao, DG
英文摘要	The differential resistance curves of GaAs- and GaN-based laser diodes (LDs) are experimentally and numerically investigated. It is found that the dependence of the differential resistance upon the injection current differs in the GaAs-and GaN-based LDs mainly in two aspects. The first is the kink polarity of the differential resistance in the vicinity of the threshold current, and the second is the behavior of the differential resistance curve beyond the threshold current. Self-consistent calculation results suggest that the LD kink and its polarity are determined by the superposition effects of the n-side, active and p-side regions of LDs. It is found that this kink mainly differs in the differential resistance curves of the active region, while the difference in the behavior of the differential resistance curve after the lasing threshold is ascribed to a resistance change in the p-side region caused by a reduced ideality factor. (C) 2016 American Vacuum Society.
关键词[WOS]	LASING THRESHOLD ; LAYER
收录类别	SCI ; EI
语种	英语
WOS记录号	WOS:000382207700022
内容类型	期刊论文
源URL	[http://ir.sinano.ac.cn/handle/332007/4799]
专题	苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_刘建平团队
推荐引用方式 GB/T 7714	Li, X,Liu, ZS,Zhao, DG,et al. Comparative study of the differential resistance of GaAs- and GaN-based laser diodes[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,2016,34(4).
APA	Li, X.,Liu, ZS.,Zhao, DG.,Jiang, DS.,Chen, P.,...&Du, GT.(2016).Comparative study of the differential resistance of GaAs- and GaN-based laser diodes.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,34(4).
MLA	Li, X,et al."Comparative study of the differential resistance of GaAs- and GaN-based laser diodes".JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 34.4(2016).

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