The effectiveness of electron blocking layer in InGaN-based laser diodes with different indium content

CORC > 苏州纳米技术与纳米仿生研究所 > 中国科学院苏州纳米技术与纳米仿生研究所 > 纳米器件及相关材料研究部 > 刘建平团队

	The effectiveness of electron blocking layer in InGaN-based laser diodes with different indium content
	Li, X; Zhao, DG; Jiang, DS; Chen, P; Liu, ZS; Zhu, JJ; Yang, J; Liu, W; He, XG; Li, XJ
刊名	PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
	2016
卷号	213 期号:8
通讯作者	Zhao, DG
英文摘要	The effects of Al composition in p-type AlGaN electron blocking layer (EBL) on electron leakage and device performance in InGaN-based quantum well (QW) laser diodes (LDs) are numerically investigated in connection with the depth of QWs. It is found that the effectiveness of EBL in blocking electron leakage depends much on Al content in EBL and In content in InGaN QWs. It is effective for low-In-content InGaN QWLDs to add moderate Al in AlGaN EBL, while it is hardly helpful and even harmful for high-In-content InGaN QWLDs to increase Al content. In addition, it is found that too much Al in EBL is unfavorable for all LDs due to the downward conduction band-bending in the last quantum barrier (LQB) layer. (C) 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
关键词[WOS]	POLARIZATION
收录类别	SCI ; EI
语种	英语
WOS记录号	WOS:000385223900031
内容类型	期刊论文
源URL	[http://ir.sinano.ac.cn/handle/332007/4798]
专题	苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_刘建平团队
推荐引用方式 GB/T 7714	Li, X,Zhao, DG,Jiang, DS,et al. The effectiveness of electron blocking layer in InGaN-based laser diodes with different indium content[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE,2016,213(8).
APA	Li, X.,Zhao, DG.,Jiang, DS.,Chen, P.,Liu, ZS.,...&Yang, H.(2016).The effectiveness of electron blocking layer in InGaN-based laser diodes with different indium content.PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE,213(8).
MLA	Li, X,et al."The effectiveness of electron blocking layer in InGaN-based laser diodes with different indium content".PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 213.8(2016).