Effects of Si-doping on field emission characteristics of AlN films grown on n-type 6H-SiC by MOCVD

	Effects of Si-doping on field emission characteristics of AlN films grown on n-type 6H-SiC by MOCVD
	Liang, F.; Chen, P.; Zhao, D.G.; Jiang, D.S.; Liu, Z.S.; Zhu, J.J.; Yang, J.; Liu, W.; Li, X.; Liu, S.T.
刊名	Materials Technology
	2016
通讯作者	Chen, P.
收录类别	EI
语种	英语
内容类型	期刊论文
源URL	[http://ir.sinano.ac.cn/handle/332007/4790]
专题	苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_刘建平团队
推荐引用方式 GB/T 7714	Liang, F.,Chen, P.,Zhao, D.G.,et al. Effects of Si-doping on field emission characteristics of AlN films grown on n-type 6H-SiC by MOCVD[J]. Materials Technology,2016.
APA	Liang, F..,Chen, P..,Zhao, D.G..,Jiang, D.S..,Liu, Z.S..,...&Du, G.T..(2016).Effects of Si-doping on field emission characteristics of AlN films grown on n-type 6H-SiC by MOCVD.Materials Technology.
MLA	Liang, F.,et al."Effects of Si-doping on field emission characteristics of AlN films grown on n-type 6H-SiC by MOCVD".Materials Technology (2016).