Observation of negative differential resistance in GaN-based multiple-quantum-well light-emitting diodes

CORC > 苏州纳米技术与纳米仿生研究所 > 中国科学院苏州纳米技术与纳米仿生研究所 > 纳米器件及相关材料研究部 > 刘建平团队

	Observation of negative differential resistance in GaN-based multiple-quantum-well light-emitting diodes
	Yang, J; Zhao, DG; Jiang, DS; Chen, P; Zhu, JJ; Liu, ZS; Le, LC; Li, XJ; He, XG; Liu, JP(刘建平)
刊名	JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
	2016
卷号	34 期号:1
通讯作者	Zhao, DG
英文摘要	Anomalous current-voltage behaviors, such as negative differential resistance (NDR) and current hysteresis, are observed in the room-temperature current-voltage (I-V) curves of InGaN/GaN multiple-quantum-well light-emitting diodes. It is found that the NDR can be observed in the positive voltage range of the I-V curve only when the samples are pretreated with a negative voltage before sweeping, and the NDR disappears permanently after an over-current treatment. The dependence of the NDR upon the negative voltage and sweeping conditions leads to the conclusion that a variation of the charging state of the defect-induced hole traps is responsible for the anomalous I-V behaviors. Therefore, NDR is excluded as a feature of the tunneling transport mechanism, especially in GaN-based devices with a high defect density. (C) 2015 American Vacuum Society.
关键词[WOS]	RESONANT-TUNNELING DIODES ; DOUBLE-BARRIER DIODES ; INSTABILITIES ; EMISSION
收录类别	SCI
语种	英语
WOS记录号	WOS:000375799800007
内容类型	期刊论文
源URL	[http://ir.sinano.ac.cn/handle/332007/4597]
专题	苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_刘建平团队
推荐引用方式 GB/T 7714	Yang, J,Zhao, DG,Jiang, DS,et al. Observation of negative differential resistance in GaN-based multiple-quantum-well light-emitting diodes[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,2016,34(1).
APA	Yang, J.,Zhao, DG.,Jiang, DS.,Chen, P.,Zhu, JJ.,...&Yang, H.(2016).Observation of negative differential resistance in GaN-based multiple-quantum-well light-emitting diodes.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,34(1).
MLA	Yang, J,et al."Observation of negative differential resistance in GaN-based multiple-quantum-well light-emitting diodes".JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 34.1(2016).