Control of threading dislocations by Al(Ga)InAs reverse-graded buffers grown on GaAs substrates

CORC > 苏州纳米技术与纳米仿生研究所 > 中国科学院苏州纳米技术与纳米仿生研究所 > 纳米器件及相关材料研究部 > 董建荣团队

	Control of threading dislocations by Al(Ga)InAs reverse-graded buffers grown on GaAs substrates
	He, Y(何洋); Sun, YR(孙玉润); Song, Y; Zhao, YM(赵勇明); Yu, SZ(于淑珍); Dong, JR(董建荣)
刊名	JAPANESE JOURNAL OF APPLIED PHYSICS
	2016
卷号	55 期号:6
通讯作者	Dong, JR(董建荣)
英文摘要	High-quality strain-relaxed InP layers with undulating step-graded Al(Ga)InAs buffers were grown on GaAs substrates by metal-organic chemical vapor deposition. Transmission electron microscopy, high-resolution electron microscopy (HREM), atom force microscopy, and photoluminescence were carried out to characterize the metamorphic buffers. V-shaped dislocations in [001] Al(Ga)InAs reverse-graded layers were observed by HREM and the behavior of reverse-graded layers was simulated theoretically using analytical models. Both the experimental and theoretical results indicated that the insertion of reverse-graded layers with appropriately designed thicknesses and In grading coefficients promotes the annihilation and coalescence reactions between threading dislocations and reduces threading dislocations density. (C) 2016 The Japan Society of Applied Physics
关键词[WOS]	METAMORPHIC BUFFERS ; MISFIT DISLOCATIONS ; LAYERS ; GENERATION ; HETEROSTRUCTURES ; SEMICONDUCTORS ; OVERSHOOT ; DEVICES ; LASERS
收录类别	SCI ; EI
语种	英语
WOS记录号	WOS:000377062700017
内容类型	期刊论文
源URL	[http://ir.sinano.ac.cn/handle/332007/4863]
专题	苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_董建荣团队
推荐引用方式 GB/T 7714	He, Y,Sun, YR,Song, Y,et al. Control of threading dislocations by Al(Ga)InAs reverse-graded buffers grown on GaAs substrates[J]. JAPANESE JOURNAL OF APPLIED PHYSICS,2016,55(6).
APA	He, Y,Sun, YR,Song, Y,Zhao, YM,Yu, SZ,&Dong, JR.(2016).Control of threading dislocations by Al(Ga)InAs reverse-graded buffers grown on GaAs substrates.JAPANESE JOURNAL OF APPLIED PHYSICS,55(6).
MLA	He, Y,et al."Control of threading dislocations by Al(Ga)InAs reverse-graded buffers grown on GaAs substrates".JAPANESE JOURNAL OF APPLIED PHYSICS 55.6(2016).