Control of symmetric properties of metamorphic In0.27Ga0.73As layers by substrate misorientation

CORC > 苏州纳米技术与纳米仿生研究所 > 中国科学院苏州纳米技术与纳米仿生研究所 > 纳米器件及相关材料研究部 > 董建荣团队

	Control of symmetric properties of metamorphic In0.27Ga0.73As layers by substrate misorientation
	Yu, SZ(于淑珍); Dong, JR(董建荣); Sun, YR(孙玉润); Li, KL(李奎龙); Zeng, XL(曾徐路); Zhao, YM(赵勇明); Yang, H(杨辉)
刊名	CHINESE PHYSICS B
	2016
卷号	25 期号:3
通讯作者	Dong, JR(董建荣)
英文摘要	Asymmetry in dislocation density and strain relaxation has a significant impact on device performance since it leads to anisotropic electron transport in metamorphic materials. So it is preferred to obtain metamorphic materials with symmetric properties. In this paper, we grew metamorphic In0.27Ga0.73As epilayers with symmetric low threading dislocation density and symmetric strain relaxation in two. 110. directions using InAlGaAs buffer layers on 7 degrees misoriented GaAs (001) substrates. To understand the control mechanism of symmetric properties of In0.27Ga0.73As layers by the substrate miscut angles, In0.27Ga0.73As grown on 2 degrees and 15 degrees misoriented substrates were also characterized as reference by atomic force microscopy, transmission electron microscopy, and high resolution triple axis x-ray diffraction. The phase separation and interaction of 60 degrees misfit dislocations were found to be the reasons for asymmetry properties of In0.27Ga0.73As grown on 2 degrees and 15 degrees substrates, respectively. Photoluminescence results proved that the In0.27Ga0.73As with symmetric properties has better optical properties than the In0.27Ga0.73As with asymmetric properties at room temperature. These results imply that high quality metamorphic In0.27Ga0.73As can be achieved with controllable isotropic electron transport property.
关键词[WOS]	STRAIN RELAXATION ; GAAS ; DISLOCATIONS ; FILMS ; NUCLEATION
收录类别	SCI ; EI
语种	英语
WOS记录号	WOS:000375647400065
内容类型	期刊论文
源URL	[http://ir.sinano.ac.cn/handle/332007/4574]
专题	苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_董建荣团队
推荐引用方式 GB/T 7714	Yu, SZ,Dong, JR,Sun, YR,et al. Control of symmetric properties of metamorphic In0.27Ga0.73As layers by substrate misorientation[J]. CHINESE PHYSICS B,2016,25(3).
APA	Yu, SZ.,Dong, JR.,Sun, YR.,Li, KL.,Zeng, XL.,...&Yang, H.(2016).Control of symmetric properties of metamorphic In0.27Ga0.73As layers by substrate misorientation.CHINESE PHYSICS B,25(3).
MLA	Yu, SZ,et al."Control of symmetric properties of metamorphic In0.27Ga0.73As layers by substrate misorientation".CHINESE PHYSICS B 25.3(2016).