Effects of buffer layer and back-surface field on MBE-grown InGaAsP/InGaAs solar cells

CORC > 苏州纳米技术与纳米仿生研究所 > 中国科学院苏州纳米技术与纳米仿生研究所 > 纳米器件及相关材料研究部 > SONY团队

	Effects of buffer layer and back-surface field on MBE-grown InGaAsP/InGaAs solar cells
	Wu, YY; Ji, L(季莲); Dai, P(代盼); Tan, M(谭明); Lu, SL(陆书龙); Yang, H(杨辉)
刊名	JAPANESE JOURNAL OF APPLIED PHYSICS
	2016
卷号	55 期号:2
通讯作者	Lu, SL(陆书龙)
英文摘要	Solid-state molecular beam epitaxy (MBE)-grown InGaAsP/InGaAs dual-junction solar cells on InP substrates are reported. An efficiency of 10.6% under 1-sun AM1.5 global light intensity is realized for the dual-junction solar cell, while the efficiencies of 16.4 and 12.3% are reached for the top InGaAsP and bottom InGaAs cells, respectively. The effects of the buffer layer and back-surface field on the performance of solar cells are discussed. High device performance is achieved in the case of a low concentration of oxygen and weak recombination when InGaAs buffers and InP back-surface field layers are used, respectively. (C) 2016 The Japan Society of Applied Physics
关键词[WOS]	MOLECULAR-BEAM-EPITAXY ; BAND OFFSETS ; EFFICIENCY ; OXYGEN ; HETEROSTRUCTURE ; JUNCTION ; INALAS ; GAAS ; INP
收录类别	SCI ; EI
语种	英语
WOS记录号	WOS:000369005300015
内容类型	期刊论文
源URL	[http://ir.sinano.ac.cn/handle/332007/4631]
专题	苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_SONY团队
推荐引用方式 GB/T 7714	Wu, YY,Ji, L,Dai, P,et al. Effects of buffer layer and back-surface field on MBE-grown InGaAsP/InGaAs solar cells[J]. JAPANESE JOURNAL OF APPLIED PHYSICS,2016,55(2).
APA	Wu, YY,Ji, L,Dai, P,Tan, M,Lu, SL,&Yang, H.(2016).Effects of buffer layer and back-surface field on MBE-grown InGaAsP/InGaAs solar cells.JAPANESE JOURNAL OF APPLIED PHYSICS,55(2).
MLA	Wu, YY,et al."Effects of buffer layer and back-surface field on MBE-grown InGaAsP/InGaAs solar cells".JAPANESE JOURNAL OF APPLIED PHYSICS 55.2(2016).