Fabrication of crack-free AlN film on sapphire by hydride vapor phase epitaxy using an in situ etching method

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	Fabrication of crack-free AlN film on sapphire by hydride vapor phase epitaxy using an in situ etching method
	Liu, XH(刘雪华); Zhang, JC(张纪才); Su, XJ(苏旭军); Huang, J(黄俊); Zheng, SN(郑树楠); Hu, YY(胡匀匀); Ye, BB(叶斌斌); Zhao, JJ; Wang, JF(王建峰); Zhang, JP(张锦平)
刊名	APPLIED PHYSICS EXPRESS
	2016
卷号	9 期号:4
通讯作者	Zhang, JP(张锦平) ; Xu, K(徐科)
英文摘要	Crack-free AlN films were grown on sapphire by hydride vapor phase epitaxy, with in situ etching applied during growth. Nanoscale voids were formed at a chosen growth stage by interrupting the growth and performing in situ etching in an H-2 atmosphere at elevated temperature. Transmission electron microscopy showed the voids located at strongly distorted locations, and hence relaxing the strain and reducing the dislocation density. Raman spectra and X-ray diffraction measurements further demonstrated important role played by the nanoscale voids in releasing misfit strain and reducing dislocations. This work opens a promising perspective for fabricating thick, high-quality AlN. (C) 2016 The Japan Society of Applied Physics
关键词[WOS]	LIGHT-EMITTING-DIODES ; ALGAN ; GAN ; TEMPLATE ; GROWTH ; LAYER ; TEMPERATURE
收录类别	SCI ; EI
语种	英语
WOS记录号	WOS:000375661600026
内容类型	期刊论文
源URL	[http://ir.sinano.ac.cn/handle/332007/4765]
专题	苏州纳米技术与纳米仿生研究所_测试分析平台
推荐引用方式 GB/T 7714	Liu, XH,Zhang, JC,Su, XJ,et al. Fabrication of crack-free AlN film on sapphire by hydride vapor phase epitaxy using an in situ etching method[J]. APPLIED PHYSICS EXPRESS,2016,9(4).
APA	Liu, XH.,Zhang, JC.,Su, XJ.,Huang, J.,Zheng, SN.,...&Xu, K.(2016).Fabrication of crack-free AlN film on sapphire by hydride vapor phase epitaxy using an in situ etching method.APPLIED PHYSICS EXPRESS,9(4).
MLA	Liu, XH,et al."Fabrication of crack-free AlN film on sapphire by hydride vapor phase epitaxy using an in situ etching method".APPLIED PHYSICS EXPRESS 9.4(2016).