Investigation of Isoelectronic Doping in p-GaN Based on The Thermal Quenching of UVL Band

	Investigation of Isoelectronic Doping in p-GaN Based on The Thermal Quenching of UVL Band
	Yang Huang ; Zhiqiang Liu ; Xiaoyan Yi ; Yao Guo ; Guodong Yuan ; JunXi Wang ; Guohong Wang ; Jinmin Li
刊名	ieee photonics journal
	2016
卷号	8 期号:5 页码:8200107
学科主题	半导体器件
收录类别	SCI
公开日期	2017-03-16
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/28087]
专题	半导体研究所_中科院半导体照明研发中心
推荐引用方式 GB/T 7714	Yang Huang,Zhiqiang Liu,Xiaoyan Yi,et al. Investigation of Isoelectronic Doping in p-GaN Based on The Thermal Quenching of UVL Band[J]. ieee photonics journal,2016,8(5):8200107.
APA	Yang Huang.,Zhiqiang Liu.,Xiaoyan Yi.,Yao Guo.,Guodong Yuan.,...&Jinmin Li.(2016).Investigation of Isoelectronic Doping in p-GaN Based on The Thermal Quenching of UVL Band.ieee photonics journal,8(5),8200107.
MLA	Yang Huang,et al."Investigation of Isoelectronic Doping in p-GaN Based on The Thermal Quenching of UVL Band".ieee photonics journal 8.5(2016):8200107.