High Sensitivity  17μm Pixel Pitch 640 × 512 Uncooled Infrared Focal Plane Arrays Based on Amorphous Vanadium Oxide Thin Films

	High Sensitivity 17μm Pixel Pitch 640 × 512 Uncooled Infrared Focal Plane Arrays Based on Amorphous Vanadium Oxide Thin Films
	P. Wang; S. Chen; X. Gan; R. Sun; W. Chen; S. Yang; and H. Wang
刊名	IEEE ELECTRON DEVICE LETTERS
	2015
英文摘要	This letter presents a 17 µm pixel pitch 640 ×512 uncooled infrared focal plane arrays based on the double sacri- ﬁcial layer microbolometer technology incorporating amorphous vanadium oxide thin ﬁlm and frequency selective structure. The amorphous vanadium oxide thin-ﬁlm features low-noise and high-thermal coefﬁcient of resistance characteristics, which help to improve the radiometric performance of the microbolometer. By incorporating a frequency selective second platform, the responsivity of the microbolometer was improved by nearly 30% over 8∼14 µm spectra band. Noise equivalent temperature difference of less than 35 mK was obtained at 300 K ambient temperature with f/1.0 optics.
收录类别	SCI
原文出处	http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=7145394
语种	英语
内容类型	期刊论文
源URL	[http://ir.siat.ac.cn:8080/handle/172644/6593]
专题	深圳先进技术研究院_集成所
作者单位	IEEE ELECTRON DEVICE LETTERS
推荐引用方式 GB/T 7714	P. Wang,S. Chen,X. Gan,et al. High Sensitivity 17μm Pixel Pitch 640 × 512 Uncooled Infrared Focal Plane Arrays Based on Amorphous Vanadium Oxide Thin Films[J]. IEEE ELECTRON DEVICE LETTERS,2015.
APA	P. Wang.,S. Chen.,X. Gan.,R. Sun.,W. Chen.,...&and H. Wang.(2015).High Sensitivity 17μm Pixel Pitch 640 × 512 Uncooled Infrared Focal Plane Arrays Based on Amorphous Vanadium Oxide Thin Films.IEEE ELECTRON DEVICE LETTERS.
MLA	P. Wang,et al."High Sensitivity 17μm Pixel Pitch 640 × 512 Uncooled Infrared Focal Plane Arrays Based on Amorphous Vanadium Oxide Thin Films".IEEE ELECTRON DEVICE LETTERS (2015).