The growth and thermal, electrical properties characterization of Ba2TiSi2O8 piezoelectric crystal

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	The growth and thermal, electrical properties characterization of Ba2TiSi2O8 piezoelectric crystal
	Cao, Shuoliang 1,2; Jiang, Bohan 1,2; Zheng, Yanqing 1; Tu, Xiaoniu 1; Xiong, Kainan 1; Gao, Pan 1; Shi, Erwei 1
刊名	JOURNAL OF CRYSTAL GROWTH
	2016-10-01
卷号	451 页码:207-213
关键词	Crystal structure Heat characterization Czochralski method Oxides Piezoelectric materials
英文摘要	Ba2TiSi2O8 (BTS) crystals were successfully grown by the Czochralski method. The raw material ratio was optimized according to the effective segregation coefficient k(eff) of different components in the BTS crystal. The thermal properties of the BTS crystal were systematically studied at elevated temperature, including thermal expansion, specific heat, thermal diffusivity and thermal conductivity. The variations of the thermal expansion coefficients alpha(33) and alpha(11) in the temperature range of 25-185 degrees C were small, whereas those in the temperature range of 185-1000 degrees C were 17.14 x 10(-6)/degrees C and 4.73 x 10(-6)/degrees C, respectively. A strong anisotropic characteristic in the thermal expansion ratio is associated with the lamellar structure of the BTS crystal. The thermal conductivity increased slowly as the temperature rises. The piezoelectric strain constant d(33) of the BTS crystal was determined to be 4.5 pC/N at room temperature using a quasi-static d(33) meter. The electrical resistivity of the BTS crystal was investigated at temperatures up to 900 degrees C, the resistivity rho(gamma), of the BTS Z-cut sample was 2.06 x 10(9) Omega cm at 800 degrees C, which is three orders of magnitude higher than that of a Ca3TaGa3Si2O14 (langasite-type crystal) X-cut sample (7.15 x 10(6) Omega cm) at the same temperature. Thermal and electrical properties have shown that BTS crystal is a potential alternative material for the high temperature piezoelectric sensors. (C) 2016 Elsevier B.V. All rights reserved.
WOS标题词	Science & Technology ; Physical Sciences ; Technology
类目[WOS]	Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied
研究领域[WOS]	Crystallography ; Materials Science ; Physics
关键词[WOS]	SINGLE-CRYSTAL ; TEMPERATURE ; SENSORS ; CA2AL2SIO7 ; GAPO4
收录类别	SCI
语种	英语
WOS记录号	WOS:000385321000032
内容类型	期刊论文
源URL	[http://ir.sic.ac.cn/handle/331005/22049]
专题	上海硅酸盐研究所_人工晶体研究中心_期刊论文
作者单位	1.Chinese Acad Sci, Shanghai Inst Ceram, Shanghai 201800, Peoples R China 2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
推荐引用方式 GB/T 7714	Cao, Shuoliang,Jiang, Bohan,Zheng, Yanqing,et al. The growth and thermal, electrical properties characterization of Ba2TiSi2O8 piezoelectric crystal[J]. JOURNAL OF CRYSTAL GROWTH,2016,451:207-213.
APA	Cao, Shuoliang.,Jiang, Bohan.,Zheng, Yanqing.,Tu, Xiaoniu.,Xiong, Kainan.,...&Shi, Erwei.(2016).The growth and thermal, electrical properties characterization of Ba2TiSi2O8 piezoelectric crystal.JOURNAL OF CRYSTAL GROWTH,451,207-213.
MLA	Cao, Shuoliang,et al."The growth and thermal, electrical properties characterization of Ba2TiSi2O8 piezoelectric crystal".JOURNAL OF CRYSTAL GROWTH 451(2016):207-213.