Surface-induced highly oriented perylo[1,12-b,c,d]selenophene thin films for high performance organic field-effect transistors

	Surface-induced highly oriented perylo[1,12-b,c,d]selenophene thin films for high performance organic field-effect transistors
	Liu, Lili 1; Ren, Zhongjie 1; Xiao, Chengyi 2; Dong, Huanli 2; Yan, Shouke 1; Hu, Wenping 2; Wang, Zhaohui 2
刊名	ORGANIC ELECTRONICS
	2016-08-01
卷号	35 页码:186-192
关键词	Perylo[1,12-b,c,d]selenophene Epitaxial crystallization Oriented thin film Organic field-effect transistors (OFETs)
英文摘要	Epitaxial crystallization of perylo[1,12-b,c,d]selenophene (PESE) on highly oriented polyethylene (PE) substrate through vapor phase deposition has been achieved. Oriented PESE crystals with different crystalline morphologies can be fabricated by changing the temperature of PE substrate during vacuum evaporation. When the PE substrate temperature is lower than 70 degrees C, sparsely dispersed PESE lathlike crystals are produced with their long axis preferentially aligned perpendicular to the chain direction of PE crystals. While the close films of PESE with lathlike crystals aligned with long axis parallel to the chain direction of PE film were obtained above 90 degrees C. Transistors based on expitaxially crystallized PESE films have been fabricated and the transistor properties were also studied. It is found that transistors show different electrical characteristics depending on the preparation conditions of expitaxially crystallized PESE films. The transistors based on the PESE/PE-SiO2/Si with PESE deposited on oriented PE film at low temperature, i.e., <70 degrees C, display a similar poor properties with the PESE/OTS-SiO2/Si type transistors. However, when the deposition temperature was elevated to 90 degrees C, the transistors exhibit a maximum field-effect mobility of 4.4 x 10(-2) cm(2) V-1 s(-1) and maximum on/off ratio of 2.0 x 10(5), which are about 2 orders of magnitudes higher than the PESE/OTS-SiO2/Si based transistors. (C) 2016 Elsevier B.V. All rights reserved.
收录类别	SCI
语种	英语
内容类型	期刊论文
源URL	[http://ir.iccas.ac.cn/handle/121111/35781]
专题	化学研究所_有机固体实验室
作者单位	1.Beijing Univ Chem Technol, State Key Lab Chem Resource Engn, Beijing 100029, Peoples R China 2.Chinese Acad Sci, Beijing Natl Lab Mol Sci, Inst Chem, Beijing 100190, Peoples R China
推荐引用方式 GB/T 7714	Liu, Lili,Ren, Zhongjie,Xiao, Chengyi,et al. Surface-induced highly oriented perylo[1,12-b,c,d]selenophene thin films for high performance organic field-effect transistors[J]. ORGANIC ELECTRONICS,2016,35:186-192.
APA	Liu, Lili.,Ren, Zhongjie.,Xiao, Chengyi.,Dong, Huanli.,Yan, Shouke.,...&Wang, Zhaohui.(2016).Surface-induced highly oriented perylo[1,12-b,c,d]selenophene thin films for high performance organic field-effect transistors.ORGANIC ELECTRONICS,35,186-192.
MLA	Liu, Lili,et al."Surface-induced highly oriented perylo[1,12-b,c,d]selenophene thin films for high performance organic field-effect transistors".ORGANIC ELECTRONICS 35(2016):186-192.