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Nitrogen-Doped Graphdiyne Applied for Lithium-Ion Storage
Zhang, Shengliang1,2; Du, Huiping1,2; He, Jianjiang1,2; Huang, Changshui1; Liu, Huibiao3; Cui, Guanglei1; Li, Yuliang3
刊名ACS APPLIED MATERIALS & INTERFACES
2016-04-06
卷号8期号:13页码:8467-8473
关键词one-atom-thick graphdiyne nitrogen-doped lithium-ion storage two-dimension-layer
英文摘要The elemental N emerged uniformly in graphdiyne (GDY) after heat treatment under NH3 atmosphere to form N-doping GDY. The interplanar N-GDY distance decreased slightly, which may be ascribed to the smaller atom radius of N than C. Compared with GDY, the introduction of N atoms in N-GDY created numerous heteroatomic defects and active sites, thus achieving enhanced electrochemical properties, including higher reversible capacity, improved rate performance, and superior cycling stability. In addition, N-doping might be advantageous to minimize the surface side reactions and form stable interfaces, hence improving the electrochemical cycling stability of N-GDY electrodes. These results indicate N-doping is also an efficient way for improving the electrochemical performance of GDY materials.
收录类别SCI
语种英语
内容类型期刊论文
源URL[http://ir.iccas.ac.cn/handle/121111/35993]  
专题化学研究所_其它
作者单位1.Chinese Acad Sci, Qingdao Inst Bioenergy & Bioproc Technol, 189 Songling Rd, Qingdao 266101, Peoples R China
2.Univ Chinese Acad Sci, 19A Yuquan Rd, Beijing 100049, Peoples R China
3.Chinese Acad Sci, Inst Chem, Beijing 100190, Peoples R China
推荐引用方式
GB/T 7714
Zhang, Shengliang,Du, Huiping,He, Jianjiang,et al. Nitrogen-Doped Graphdiyne Applied for Lithium-Ion Storage[J]. ACS APPLIED MATERIALS & INTERFACES,2016,8(13):8467-8473.
APA Zhang, Shengliang.,Du, Huiping.,He, Jianjiang.,Huang, Changshui.,Liu, Huibiao.,...&Li, Yuliang.(2016).Nitrogen-Doped Graphdiyne Applied for Lithium-Ion Storage.ACS APPLIED MATERIALS & INTERFACES,8(13),8467-8473.
MLA Zhang, Shengliang,et al."Nitrogen-Doped Graphdiyne Applied for Lithium-Ion Storage".ACS APPLIED MATERIALS & INTERFACES 8.13(2016):8467-8473.
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