XPS study of impurities in Si-doped AlN film

CORC > 化学研究所 > 中国科学院化学研究所 > 其它

	XPS study of impurities in Si-doped AlN film
	Liang, F.1; Chen, P.1; Zhao, D. G.1; Jiang, D. S.1; Zhao, Z. J.2; Liu, Z. S.1; Zhu, J. J.1; Yang, J.1; Le, L. C.1; Liu, W.1
刊名	SURFACE AND INTERFACE ANALYSIS
	2016-12-01
卷号	48 期号:12 页码:1305-1309
关键词	AlN XPS MOCVD
英文摘要	This paper reports an XPS study of impurities in a 100-nm-thick AlN film grown by metalorganic chemical vapor deposition (MOCVD) under low pressure on the n-type 6H-SiC substrate. The Si-doped AlN film was characterized by the X-ray photoelectron spectroscopy (XPS) in a high vacuum system, which reveals the content distribution and chemical states of impurities along depth. The XPS analysis of AlN film before and after argon-ion etching indicates that there always exist Ga, O and C contaminations in AlN film. Especially, O contamination on the AlN film surface is mostly introduced during the growth of AlN layer by MOCVD. Meanwhile, most of O atoms bind with Al or Ga in Al?O and Ga?O chemical states. In particular, the Ga atoms in AlN film are always in two chemical states, i.e. Ga?Ga bond and Ga?O bond, which demonstrates that the aggregation of Ga is accompanying with AlN growth. Copyright (c) 2016 John Wiley & Sons, Ltd.
收录类别	SCI
语种	英语
内容类型	期刊论文
源URL	[http://ir.iccas.ac.cn/handle/121111/35715]
专题	化学研究所_其它
作者单位	1.Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Chem, Ctr Physicochem Anal & Measurement, Beijing 100190, Peoples R China 3.Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China 4.Jilin Univ, Coll Elect Sci & Engn, State Key Lab Integrated Optoelect, Changchun 130023, Peoples R China
推荐引用方式 GB/T 7714	Liang, F.,Chen, P.,Zhao, D. G.,et al. XPS study of impurities in Si-doped AlN film[J]. SURFACE AND INTERFACE ANALYSIS,2016,48(12):1305-1309.
APA	Liang, F..,Chen, P..,Zhao, D. G..,Jiang, D. S..,Zhao, Z. J..,...&Du, G. T..(2016).XPS study of impurities in Si-doped AlN film.SURFACE AND INTERFACE ANALYSIS,48(12),1305-1309.
MLA	Liang, F.,et al."XPS study of impurities in Si-doped AlN film".SURFACE AND INTERFACE ANALYSIS 48.12(2016):1305-1309.