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	Laser pulse induced bumps in chalcogenide phase change films
	Wei JS(魏劲松) ; Jiao Xinbing ; 干福熹n ; Xiao Mufei
刊名	j. appl. phys.
	2008
卷号	103期号:12页码:124516
关键词	(e ,3e) process American Institute of Physics (AIP) Analytic solutions beam sizes chalcogenide Data storage Experimental observations formation processes Laser powering Laser pulse durations Laser writing phase change films Phase change thin films Shape and size
ISSN号	0021-8979
中文摘要	formation of bumps in chalcogenide phase change thin films during the laser writing process is theoretically and experimentally investigated. the process involves basically fast heating and quenching stages. circular bumps are formed after cooling, and the shape and size of the bumps depend on various parameters such as temperatures, laser power, beam size, laser pulse duration, etc. in extreme cases, holes are formed at the apex of the bumps. to understand the bumps and their formation is of great interest for data storage. in the present work, a theoretical model is established for the formation process, and the geometric characters of the formed bumps can be analytically and quantitatively evaluated from various parameters involved in the formation. simulations based on the analytic solution are carried out taking ag8in14sb55te23 as an example. the results are verified with experimental observations of the bumps. (c) 2008 american institute of physics.
学科主题	光存储
收录类别	EI
语种	英语
WOS记录号	WOS:000257284100119
公开日期	2009-09-22
内容类型	期刊论文
源URL	[http://ir.siom.ac.cn/handle/181231/4075]
专题	上海光学精密机械研究所_高密度光存储技术实验室
推荐引用方式 GB/T 7714	Wei JS,Jiao Xinbing,干福熹n,et al. Laser pulse induced bumps in chalcogenide phase change films[J]. j. appl. phys.,2008,103(12):124516.
APA	魏劲松,Jiao Xinbing,干福熹n,&Xiao Mufei.(2008).Laser pulse induced bumps in chalcogenide phase change films.j. appl. phys.,103(12),124516.
MLA	魏劲松,et al."Laser pulse induced bumps in chalcogenide phase change films".j. appl. phys. 103.12(2008):124516.

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