Impact of growth parameters on the morphology and microstructure of epitaxial GaAs nanowires grown by molecular beam epitaxy

	Impact of growth parameters on the morphology and microstructure of epitaxial GaAs nanowires grown by molecular beam epitaxy
	Z.Y.Lu P.P.Chen Z.M.Liao S.X.Shi Y.Sun T.X.Li Y.H.Zhang J.Zou W.Lu
刊名	J.Alloy.Compd
	2013-01-01
卷号	580 期号:82
关键词	Galliumarsenide Nanowire Molecularbeamepitaxy Microstructure
学科主题	红外基础研究
公开日期	2014-11-10
内容类型	期刊论文
源URL	[http://202.127.1.142/handle/181331/7724]
专题	上海技术物理研究所_上海技物所
推荐引用方式 GB/T 7714	Z.Y.Lu P.P.Chen Z.M.Liao S.X.Shi Y.Sun T.X.Li Y.H.Zhang J.Zou W.Lu. Impact of growth parameters on the morphology and microstructure of epitaxial GaAs nanowires grown by molecular beam epitaxy[J]. J.Alloy.Compd,2013,580(82).
APA	Z.Y.Lu P.P.Chen Z.M.Liao S.X.Shi Y.Sun T.X.Li Y.H.Zhang J.Zou W.Lu.(2013).Impact of growth parameters on the morphology and microstructure of epitaxial GaAs nanowires grown by molecular beam epitaxy.J.Alloy.Compd,580(82).
MLA	Z.Y.Lu P.P.Chen Z.M.Liao S.X.Shi Y.Sun T.X.Li Y.H.Zhang J.Zou W.Lu."Impact of growth parameters on the morphology and microstructure of epitaxial GaAs nanowires grown by molecular beam epitaxy".J.Alloy.Compd 580.82(2013).