The Influence of the Silicon/Silicon Oxide Space Charge Region on Excess Charge Carrier Kinetics in Silicon

	The Influence of the Silicon/Silicon Oxide Space Charge Region on Excess Charge Carrier Kinetics in Silicon
刊名	Physica Status Solidi B-Basic Solid State Physics
	2011
卷号	248 期号:2 页码:352-360
关键词	heterojunctions silicon SiO(2) surface photovoltage time-resolved conductivity
语种	英语
内容类型	期刊论文
源URL	[http://202.127.2.71:8080/handle/181331/11222]
专题	上海技术物理研究所_全文传递文献库_qwcd 期刊论文
推荐引用方式 GB/T 7714	. The Influence of the Silicon/Silicon Oxide Space Charge Region on Excess Charge Carrier Kinetics in Silicon[J]. Physica Status Solidi B-Basic Solid State Physics,2011,248(2):352-360.
APA	(2011).The Influence of the Silicon/Silicon Oxide Space Charge Region on Excess Charge Carrier Kinetics in Silicon.Physica Status Solidi B-Basic Solid State Physics,248(2),352-360.
MLA	"The Influence of the Silicon/Silicon Oxide Space Charge Region on Excess Charge Carrier Kinetics in Silicon".Physica Status Solidi B-Basic Solid State Physics 248.2(2011):352-360.