Fabrication and Transfer of Flexible Few-Layers MoS2 Thin Film Transistors to Any Arbitrary Substrate

	Fabrication and Transfer of Flexible Few-Layers MoS2 Thin Film Transistors to Any Arbitrary Substrate
刊名	ACS NANO
	2013
卷号	7 期号:10 页码:8809-8815
关键词	MOS2 flexible electronics graphene transition metal dichalcogenides mobility bending radius transfer technique
语种	英语
内容类型	期刊论文
源URL	[http://202.127.2.71:8080/handle/181331/10875]
专题	上海技术物理研究所_全文传递文献库_qwcd 期刊论文
推荐引用方式 GB/T 7714	. Fabrication and Transfer of Flexible Few-Layers MoS2 Thin Film Transistors to Any Arbitrary Substrate[J]. ACS NANO,2013,7(10):8809-8815.
APA	(2013).Fabrication and Transfer of Flexible Few-Layers MoS2 Thin Film Transistors to Any Arbitrary Substrate.ACS NANO,7(10),8809-8815.
MLA	"Fabrication and Transfer of Flexible Few-Layers MoS2 Thin Film Transistors to Any Arbitrary Substrate".ACS NANO 7.10(2013):8809-8815.