Influence of oxygen pressure and substrate temperature on the properties of aluminum fluoride thin films | |
Li, Xu; Zhang, Weili; Sun, Jian; Liu, Jie; Hou, Yongqiang; Lin, Ling; He, Kai; Yi, Kui | |
刊名 | appl. surf. sci. |
2013 | |
卷号 | 282页码:226 |
通讯作者 | zhang, wl (reprint author), chinese acad sci, shanghai inst opt & fine mech, key lab mat high power laser, shanghai 201800, peoples r china. |
英文摘要 | single layers of alf3 were deposited at different substrate temperature by resistant heating technique in vacuum and in certain oxygen pressure. the chemical composition, total stress, optical constants and laser damage resistance were characterized. comparative study indicates that alf3 films deposited under certain oxygen pressure and lower temperature tend to absorb more water when exposed to air and as a result, their total stress and optical absorption are reduced. these differences and the increased laser-induced damage threshold (lidt) at 355 nm demonstrate that reasonable oxygen pressure and substrate temperature may improve alf3 films' uv performance. (c) 2013 elsevier b. v. all rights reserved. |
收录类别 | SCI |
语种 | 英语 |
内容类型 | 期刊论文 |
版本 | 出版稿 |
源URL | [http://ir.siom.ac.cn/handle/181231/14852] |
专题 | 上海光学精密机械研究所_中科院强激光材料重点实验室 |
作者单位 | 1.[Li, Xu 2.Zhang, Weili 3.Sun, Jian 4.Liu, Jie 5.Hou, Yongqiang 6.Lin, Ling 7.He, Kai 8.Yi, Kui] Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Key Lab Mat High Power Laser, Shanghai 201800, Peoples R China 9.[Li, Xu 10.Sun, Jian |
推荐引用方式 GB/T 7714 | Li, Xu,Zhang, Weili,Sun, Jian,et al. Influence of oxygen pressure and substrate temperature on the properties of aluminum fluoride thin films[J]. appl. surf. sci.,2013,282:226. |
APA | Li, Xu.,Zhang, Weili.,Sun, Jian.,Liu, Jie.,Hou, Yongqiang.,...&Yi, Kui.(2013).Influence of oxygen pressure and substrate temperature on the properties of aluminum fluoride thin films.appl. surf. sci.,282,226. |
MLA | Li, Xu,et al."Influence of oxygen pressure and substrate temperature on the properties of aluminum fluoride thin films".appl. surf. sci. 282(2013):226. |
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