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题名	TeO&ltsub>x&lt/sub>薄膜的反应磁控溅射工艺及其在光热作用下光谱性质的变化研究
作者	王小勇
学位类别	硕士
答辩日期	2010
授予单位	中国科学院上海光学精密机械研究所
导师	顾冬红
关键词	母盘刻录 TeOx薄膜 磁控溅射 蓝光只读光盘 光谱性质
其他题名	Preparation of TeOx thin films by reactive magnetron sputtering and effects of UV irradiation and annealing on their spectral properties
中文摘要	自从光存储技术面世，其就成为人类不可或缺的文字、图像、音频和视频等信息存储技术。随着蓝光光盘时代的到来，蓝光只读光盘作为其中一种主要种类，其制造技术蓝光只读光盘母盘刻录技术也要不断的向前发展。因此，开发用于蓝光只读光盘母盘刻录技术的刻录材料具有重要意义。论文首先综述了光存储和只读光盘母盘刻录技术的发展历程，并着重介绍了蓝光只读光盘母盘刻录技术的研究现状，然后提出了本论文的主要研究内容：研究TeOx薄膜的反应磁控溅射工艺和紫外辐照对薄膜光谱性质的影响，为其应用于蓝光只读光盘母盘刻录做好技术上的准备。 研究了溅射工艺参数如溅射功率、氧氩比对TeOx薄膜组成、结构、光谱性质和表面形貌的影响。发现，当氧氩比为2：98时，低的溅射功率（25W）溅射表现出介质溅射的特征，其薄膜组成为氧化态的TeO2，为非晶态结构，光谱和纯TeO2类似；随着功率提高到40W，溅射表现出金属溅射的特征，薄膜组成为游离态Te和氧化态TeO2，其透射率在可见光波段几乎为0；当功率继续提高（55W）时薄膜的组成、光谱和40W条件下制备薄膜类似，但薄膜表面粗糙度会增加，致密度下降。当氧氩比变化时，低的氧氩比（小于1：80）薄膜组成为游离态Te和氧化态TeO2，其中游离态Te为晶态，氧化态TeO2为非晶态，其透射光谱和游离态Te类似；高的氧氩比薄膜组成为氧化态TeO2，在300nm附近有一吸收边，在可见光波段几乎全部透射。红外光谱测试发现不同氧氩比薄膜都有Te-O键的吸收带，其位于600-700cm-1之间，而且随着氧氩比的增加变尖锐且强度逐渐增加。和文献数据比较后发现，在“贫氧”条件下吸收峰随着氧氩比的增加向低频方向移动，但在“富氧”条件下吸收峰随之向高频方向移动，表明随着化学计量比变化薄膜的键结构的排列存在着某种变化。此外，随着氧氩比增加，薄膜溅射速率会下降，薄膜的表面粗糙度会有一定幅度下降，表面平整度改善。 对TeOx薄膜进行了紫外辐照研究。选定溅射功率为40W、氧氩比0.4：80条件下制备的沉积态薄膜进行了紫外辐照时间变化实验，辐照功率为2kW。辐照时间1min的薄膜其透射峰位置红移了40nm，辐照时间3min薄膜其透射峰位置红移了57nm，然后该薄膜的透射峰偏移程度随着辐照时间的延长开始减弱直至可以忽略。对不同氧氩比薄膜紫外辐照3min前后透射光谱进行了对比，辐照前后薄膜透射曲线的吸收边都发生了移动，其中氧氩比为0.2：80和0.4：80的薄膜其吸收边发生了红移，氧氩比0.6：80、0.8：80、1.0：80的薄膜其吸收边发生了蓝移。这种现象可以用Urbach能理论获得一定的解释。由于Urbach能和导带底价带顶附近带尾宽度有关，也是微结构（缺陷和无序结构）的表征。所以紫外辐照引起的吸收边红移和蓝移可以归因于TeOx薄膜化学键结构的无序或者重排。为了更好的了解紫外辐照对薄膜影响的机理，通过退火来模拟紫外辐照。结果表明紫外辐照和退火对TeOx薄膜光谱性质的影响既有相似点也有不同处。不同退火温度（150、250、400°C）下退火前后透射光谱对比发现，150°C退火和紫外辐照对薄膜光谱性质的影响比较接近。在150°C退火前后不同氧氩比薄膜透射光谱对比发现，氧氩比0.2：80和0.4：80薄膜吸收边红移和氧氩比0.6：80和0.8：80薄膜吸收边蓝移同样被观察到，这和紫外辐照的影响一致，只是吸收边偏移幅度略有差别；氧氩比1：80薄膜吸收边偏移方向和紫外辐照相反。
英文摘要	Since optical storage technology available, it has become an indispensable information storage technology used for text, images, audio, video and others. With the era of Blu-ray Disc(BD) coming, Mastering for Blu-ray Disc-ROM (BD-ROM) as one of the main types of BD, which is used to manufacture BD-ROM disk, has to move forward. Therefore, to develop recording material for mastering for the BD is of great significance. The thesis firstly presents an overview of optical storage and ROM disk mastering technology development process, especially the BD-ROM mastering technology, and then shows the main part of this thesis: studying reactively magnetron sputtering process of TeOx thin film and effect of UV irradiation on spectral properties of thin films, for technical preparation for mastering of BD-ROM. The influences of sputtering process parameters, such as sputtering power, ratio of oxygen versus argon, on the composition, structure, spectral properties and surface morphology of TeOx film was studied. It was found that when O2/Ar ratio is 2:98 the sputtering with lower sputtering power (25W) is in the dielectric mode, the composition of the film is TeO2, and the film which spectra is similar to pure TeO2 is amorphous; as sputtering power increases to 40W, sputtering goes into the metallic mode, the film is composed of Te in free state and TeO2, which transmittance in the visible band is almost 0; when the power is up to 55W, film composition and spectra is similar to those of 40W, but the film surface roughness becomes worse. When O2/Ar ratio changes, the film with the lower ratio (less than 1:80) is composed of Te in free state which is crystalline and TeO2 which is amorphous, and its transmission spectrum is similar to that of Te; with O2/Ar ratio higher than 1:80, the thin film is composed of TeO2, and the transmission curve shows an absorption edge near the 300nm with almost all the visible light transmission transparent. IR spectra of the films with different O2/Ar ratio show absorption band of Te-O bond, which is located between 600 and 700cm-1, and with the increase of O2/Ar ratio the intensity increases gradually and becomes sharp. After comparing with earlier study, it can be concluded that in the oxygen-poor environment the absorbance peak shifts towards lower frequency with an increase in oxygen partial pressure; but in the oxygen-rich environment the absorbance peak shifts towards higher frequency with increase of that. These changes indicate the possible change in the arrangement of bonding network with variation of the stoichiometry. In addition, with the increasing of O2/Ar ratio deposition rates decrease, and the surface roughness of thin film declined to a certain level. UV-irradiation of TeOx films was studied. With the change of the time of UV-irradiation of 2kW on films with sputtering power 40W and O2/Ar ratio 0.4:80, when irradiation time is 1min, the absorption edge red-shifted by 40nm; for irradiation time of 3min absorption edge red-shifted by 57nm; and with the irradiation time increasing the shift of absorption edge started decreasing until it can be ignored. And red shift of the absorption edges for film 0.2:80 and 0.4:80 and blue shift for film 0.6:80, 0.8:80 and 1.0:80 were observed after illumination. This phenomenon can be explained based on Urbach energy theory. Urbach energy is related to the width of exponential absorption edge or the band tail of the localized states at the conduction or valence band edge and the disordering structure or defects. So the blue and red shift can be attributed to the disordering or rearrangement of bonding network of TeOx films. Annealing is used to simulate the UV illumination to find out the mechanism of ultraviolet radiation. it can be concluded that the effect of UV illumination and annealing on the arrangement of bonding network of TeOx films have not only similarities but also differences. Comparing the transmission spectra of film with certain O2/Ar ratio before and after annealing at different temperatures (150, 250, 400 °C) , the effect of the annealing at 150°C on the spectra is similar to that after UV illumination. Comparing the spectra of film with different O2/Ar ratio before and after annealing at 150°C, red shift of the absorption edges for films 0.2:80 and 0.4:80 and blue shift for films 0.6:80, 0.8:80 was also observed after annealing like after UV illumination, but the extent of shift after annealing was different from that after UV illumination; the direction of shift of the absorption edge for film 1.0:80 after annealing is opposite to that after UV illumination.
语种	中文
内容类型	学位论文
源URL	[http://ir.siom.ac.cn/handle/181231/16429]
专题	上海光学精密机械研究所_学位论文
推荐引用方式 GB/T 7714	王小勇. TeO&ltsub>x&lt/sub>薄膜的反应磁控溅射工艺及其在光热作用下光谱性质的变化研究[D]. 中国科学院上海光学精密机械研究所. 2010.

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