Annealing effects on properties of bi-substituted garnet films with perpendicular anisotropy prepared by a sol-gel method
Zhang YP(张约品); Wang XY(王现英); Ruan H(阮昊); Shen DF(沈德芳); Gan FX(干福熹)
刊名chin. phys. lett.
2003
卷号20期号:5页码:746
通讯作者zhang, yp (reprint author), chinese acad sci, shanghai inst opt & fine mech, shanghai 201800, peoples r china
英文摘要bi-substituted garnet elms with perpendicular anisotropy have been prepared by a sol-gel method. annealing effects on magneto-optical properties and structures of the elms are studied. the results indicate that the kerr hysteresis loops of garnet films have good squareness at annealing temperatures above 650degreesc, the coercive force h. of these films increases from 1070 to 1570 oe with the increasing temperature from 650degrees to 700degreesc. the kerr rotation of the elms was changed with the increasing annealing temperature, and there is a maximum value (0.82degrees) at 675degreesc. it was found that the structure of the elms is a single phase of garnet without preferring orientation when the annealing temperature is about 650degreesc, but a new phase (bi2al4o9) can be formed when the annealing temperature reaches 675degreesc, another new phase (bi2fe4o9) appears when the annealing temperature is about 700degreesc.
收录类别SCI
语种英语
WOS记录号WOS:000182922700044
内容类型期刊论文
版本出版稿
源URL[http://ir.siom.ac.cn/handle/181231/18460]  
专题上海光学精密机械研究所_高密度光存储技术实验室
作者单位1.Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Shanghai 201800, Peoples R China
2.Ningbo Univ, Lab Photoelect Mat, Ningbo 315211, Peoples R China
推荐引用方式
GB/T 7714
Zhang YP,Wang XY,Ruan H,et al. Annealing effects on properties of bi-substituted garnet films with perpendicular anisotropy prepared by a sol-gel method[J]. chin. phys. lett.,2003,20(5):746.
APA 张约品,王现英,阮昊,沈德芳,&干福熹.(2003).Annealing effects on properties of bi-substituted garnet films with perpendicular anisotropy prepared by a sol-gel method.chin. phys. lett.,20(5),746.
MLA 张约品,et al."Annealing effects on properties of bi-substituted garnet films with perpendicular anisotropy prepared by a sol-gel method".chin. phys. lett. 20.5(2003):746.
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