Comparison of optical transients during the picosecond laser pulse-induced crystallization of GeSbTe and AgInSbTe phase-change thin films: Nucleation-driven versus growth-driven processes

CORC > 上海光学精密机械研究所 > 中国科学院上海光学精密机械研究所 > 高密度光存储技术实验室

	Comparison of optical transients during the picosecond laser pulse-induced crystallization of GeSbTe and AgInSbTe phase-change thin films: Nucleation-driven versus growth-driven processes
	Liang, Guangfei ; Li, Simian ; Huang, Huan ; Wang, Yang ; Lai, Tianshu ; Wu, Yiqun
刊名	physica b
	2013
卷号	424 页码:1
通讯作者	wang, y (reprint author), chinese acad sci, shanghai inst opt & fine mech, key lab high power laser mat, shanghai 201800, peoples r china.
英文摘要	direct comparison of the real-time in-situ crystallization behavior of as-deposited amorphous ge2sb2te5 (gesbte) and ag(8)ln(14)sb(55)te(23) (aginsbte) phase-change thin films driven by picosecond laser pulses was performed by a time-resolved optical pump-probe technique with nanosecond resolution. different optical transients showed various crystallization processes because of the dissimilar nucleation- and growth-dominated mechanisms of the two materials. the effects of laser pulse fluence, thermal conductive structure, and successive pulse irradiation on their crystallization dynamics were also discussed. a schematic was then established to describe the different crystallization processes beginning from the as-deposited amorphous state. the results may provide further insight into the phase-change mechanism under extra-non-equilibrium conditions and aid the development of ultrafast phase-change memory materials. (c) 2013 elsevier by. all rights reserved.
收录类别	SCI
语种	英语
内容类型	期刊论文
版本	出版稿
源URL	[http://ir.siom.ac.cn/handle/181231/14824]
专题	上海光学精密机械研究所_高密度光存储技术实验室
作者单位	1.[Liang, Guangfei 2.Huang, Huan 3.Wang, Yang 4.Wu, Yiqun] Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Key Lab High Power Laser Mat, Shanghai 201800, Peoples R China 5.[Li, Simian 6.Lai, Tianshu] Sun Yat Sen Univ, Dept Phys, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China
推荐引用方式 GB/T 7714	Liang, Guangfei,Li, Simian,Huang, Huan,et al. Comparison of optical transients during the picosecond laser pulse-induced crystallization of GeSbTe and AgInSbTe phase-change thin films: Nucleation-driven versus growth-driven processes[J]. physica b,2013,424:1.
APA	Liang, Guangfei,Li, Simian,Huang, Huan,Wang, Yang,Lai, Tianshu,&Wu, Yiqun.(2013).Comparison of optical transients during the picosecond laser pulse-induced crystallization of GeSbTe and AgInSbTe phase-change thin films: Nucleation-driven versus growth-driven processes.physica b,424,1.
MLA	Liang, Guangfei,et al."Comparison of optical transients during the picosecond laser pulse-induced crystallization of GeSbTe and AgInSbTe phase-change thin films: Nucleation-driven versus growth-driven processes".physica b 424(2013):1.