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Controlling the Interface Areas of Organic/Inorganic Semiconductor Heterojunction Nanowires for High-Performance Diodes
Xue, Zheng1,2; Yang, Hui2; Gao, Juan2; Li, Jiaofu2; Chen, Yanhuan2; Jia, Zhiyu2; Li, Yongjun2; Liu, Huibiao2; Yang, Wensheng1; Li, Yuliang2
刊名ACS APPLIED MATERIALS & INTERFACES
2016-08-24
卷号8期号:33页码:21563-21569
关键词graphdiyne CuS organic/inorganic core/shell heterojunction nanowires rectification ratio
英文摘要A new method of in situ electrically induced self assembly technology combined with electrochemical deposition has been developed for the controllable preparation of organic/inorganic core/shell semiconductor heterojunction nanowire arrays. The size of the interface of the heterojunction nanowire can be tuned by the growing parameter. The heterojunction nanowires of graphdiyne/CuS with core/shell structure showed the strong dependence of rectification ratio and perfect diode performance on the size of the interface. It will be a new way for controlling the structures and properties of one-dimensional heterojunction nanomaterials.
收录类别SCI
语种英语
内容类型期刊论文
源URL[http://ir.iccas.ac.cn/handle/121111/35285]  
专题化学研究所_有机固体实验室
作者单位1.Jilin Univ, Coll Chem, State Key Lab Supramol Struct & Mat, Changchun 130012, Peoples R China
2.Chinese Acad Sci, Beijing Natl Lab Mol Sci, Inst Chem, CAS Key Lab Organ Solids, Beijing 100190, Peoples R China
3.Shantou Univ, Dept Chem, Shantou 515063, Guangdong, Peoples R China
推荐引用方式
GB/T 7714
Xue, Zheng,Yang, Hui,Gao, Juan,et al. Controlling the Interface Areas of Organic/Inorganic Semiconductor Heterojunction Nanowires for High-Performance Diodes[J]. ACS APPLIED MATERIALS & INTERFACES,2016,8(33):21563-21569.
APA Xue, Zheng.,Yang, Hui.,Gao, Juan.,Li, Jiaofu.,Chen, Yanhuan.,...&Li, Dan.(2016).Controlling the Interface Areas of Organic/Inorganic Semiconductor Heterojunction Nanowires for High-Performance Diodes.ACS APPLIED MATERIALS & INTERFACES,8(33),21563-21569.
MLA Xue, Zheng,et al."Controlling the Interface Areas of Organic/Inorganic Semiconductor Heterojunction Nanowires for High-Performance Diodes".ACS APPLIED MATERIALS & INTERFACES 8.33(2016):21563-21569.
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