Ultrabroad near-infrared photoluminescence from bismuth doped CsPbI3: polaronic defects vs. bismuth active centers

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	Ultrabroad near-infrared photoluminescence from bismuth doped CsPbI3: polaronic defects vs. bismuth active centers
	Zhou, Y; Zhou, DD; Liu, BM; Li, LN; Yong, ZJ; Xing, H; Fang, YZ; Hou, JS; Sun, HT
刊名	JOURNAL OF MATERIALS CHEMISTRY C
	2016
卷号	4 期号:12 页码:2295—2301
关键词	THIN-FILMS NIR PHOTOLUMINESCENCE SILICA GLASS LUMINESCENCE CS4PBI6 BI ABSORPTION IMPURITY PHASE PB
ISSN号	2050-7526
通讯作者	Sun, HT (reprint author), Soochow Univ, State & Local Joint Engn Lab Novel Funct Polymer, Coll Chem Chem Engn & Mat Sci, Suzhou 215123, Peoples R China.
英文摘要	Bismuth doped materials with near infrared (NIR) photoluminescence (PL) have recently attracted tremendous attention because of their great potential for photonic and optoelectronic devices that could find broad applications in modern optical telecommunications. However, the mechanistic studies of the NIR PL from these materials still significantly lag behind, which imposes substantial limitations in rationally discovering and designing new materials. In this contribution, we investigated the optical and structural properties of Bi doped CsPbI3 using a diverse range of experimental techniques. We proved that the observed ultrabroad NIR PL with lifetimes of tens of microseconds is not connected with a single-ion Bi active center. For the first time, we proposed a polaron model to rationally explain the observed PL from Bi doped CsPbI3. Finally, we demonstrate the first observation of NIR PL from nanowires among the Bi doped luminescent materials. The experimental results reported here not only deepen the understanding of NIR PL mechanisms in Bi doped materials, but also introduce a new family of solution-processed nanostructures operating in the NIR, which may stimulate further research in exploiting this technique to design a broad range of photonic and optoelectronic devices.
收录类别	SCI
语种	英语
WOS记录号	WOS:000372643300006
内容类型	期刊论文
源URL	[http://ir.sinap.ac.cn/handle/331007/25879]
专题	上海应用物理研究所_中科院上海应用物理研究所2011-2017年
推荐引用方式 GB/T 7714	Zhou, Y,Zhou, DD,Liu, BM,et al. Ultrabroad near-infrared photoluminescence from bismuth doped CsPbI3: polaronic defects vs. bismuth active centers[J]. JOURNAL OF MATERIALS CHEMISTRY C,2016,4(12):2295—2301.
APA	Zhou, Y.,Zhou, DD.,Liu, BM.,Li, LN.,Yong, ZJ.,...&Sun, HT.(2016).Ultrabroad near-infrared photoluminescence from bismuth doped CsPbI3: polaronic defects vs. bismuth active centers.JOURNAL OF MATERIALS CHEMISTRY C,4(12),2295—2301.
MLA	Zhou, Y,et al."Ultrabroad near-infrared photoluminescence from bismuth doped CsPbI3: polaronic defects vs. bismuth active centers".JOURNAL OF MATERIALS CHEMISTRY C 4.12(2016):2295—2301.