The Origin of Oxygen Vacancies Controlling La2/3Sr1/3MnO3 Electronic and Magnetic Properties

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	The Origin of Oxygen Vacancies Controlling La2/3Sr1/3MnO3 Electronic and Magnetic Properties
	Guo, HZ; Wang, JO; He, X; Yang, ZZ; Zhang, QH; Jin, KJ; Ge, C; Zhao, RQ; Gu, L; Feng, YQ
刊名	ADVANCED MATERIALS INTERFACES
	2016
卷号	3 期号:5 页码:—
关键词	RAY-ABSORPTION-SPECTROSCOPY MIXED-VALENCE MANGANITES THIN-FILMS MANGANESE PEROVSKITES INTERFACIAL-STRAIN METAL TRANSITION DOPED MANGANITES LA1-XSRXMNO3 OXIDES MAGNETORESISTANCE
ISSN号	2196-7350
通讯作者	Jin, KJ ; Gu, L (reprint author), Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China. ; Jin, KJ ; Gu, L (reprint author), Collaborat Innovat Ctr Quantum Matter, Beijing 100871, Peoples R China.
英文摘要	Mixed-valence manganites gain increasing attentions thanks to their extraordinary properties including half-metallicity and colossal magnetoresistive response, rendering them ideal candidate for oxide spintronics applications. Oxygen vacancies in oxides have been approved to be important functional defects and are effective to manipulating their multifunctional properties. To gain a deep insight into the roles of oxygen vacancies on regulating the atomic structure and electronic properties of the mixed-valence manganites, two high-quality epitaxial La2/3Sr1/3MnO3 films around a critical point (without/with oxygen vacancies) were designed and fabricated. From the experiments and theoretical calculations, it was found that the oxygen vacancies induce a weakening of Mn-O-Mn hybridized bond and an increase of concentration of Mn3+ ions, impair the double exchange between Mn3+ and Mn4+, and therefore lead to the transition from metal to insulator and the degraded magnetic properties. Our finding demonstrates a practical approach to tune the magnetic and transport properties of oxide thin films by precisely controlling the oxygen vacancies for high performance spintronics applications.
收录类别	SCI
语种	英语
WOS记录号	WOS:000372005900010
内容类型	期刊论文
源URL	[http://ir.sinap.ac.cn/handle/331007/25870]
专题	上海应用物理研究所_中科院上海应用物理研究所2011-2017年
推荐引用方式 GB/T 7714	Guo, HZ,Wang, JO,He, X,et al. The Origin of Oxygen Vacancies Controlling La2/3Sr1/3MnO3 Electronic and Magnetic Properties[J]. ADVANCED MATERIALS INTERFACES,2016,3(5):—.
APA	Guo, HZ.,Wang, JO.,He, X.,Yang, ZZ.,Zhang, QH.,...&Yang, GZ.(2016).The Origin of Oxygen Vacancies Controlling La2/3Sr1/3MnO3 Electronic and Magnetic Properties.ADVANCED MATERIALS INTERFACES,3(5),—.
MLA	Guo, HZ,et al."The Origin of Oxygen Vacancies Controlling La2/3Sr1/3MnO3 Electronic and Magnetic Properties".ADVANCED MATERIALS INTERFACES 3.5(2016):—.