Stacking-Dependent Interlayer Coupling in Trilayer Mo52 with Broken Inversion Symmetry

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	Stacking-Dependent Interlayer Coupling in Trilayer Mo52 with Broken Inversion Symmetry
	Yan, J. X.; J. Xia; X. L. Wang; L. Liu; J. L. Kuo; B. K. Tay; S. S. Chen; W. Zhou; Z. Liu and Z. X. Shen
刊名	Nano Letters
	2015
卷号	15 期号:12 页码:8155-8161
英文摘要	The stacking configuration in few-layer two-dimensional (2D) materials results in different structural symmetries and layer-to-layer interactions, and hence it provides a very useful parameter for tuning their electronic properties. For example, ABA-stacking trilayer graphene remains semimetallic similar to that of monolayer, while ABC-stacking is predicted to be a tunable band gap semiconductor under an external electric field. Such stacking dependence resulting from many-body interactions has recently been the focus of intense research activities. Here we demonstrate that few-layer MoS2 samples grown by chemical vapor deposition with different stacking configurations (AA, AB for bilayer; AAB, ABB, ABA, AAA for trilayer) exhibit distinct coupling phenomena in both photoluminescence and Raman spectra. By means of ultralow-frequency (ULF) Raman spectroscopy, we demonstrate that the evolution of interlayer interaction with various stacking configurations correlates strongly with layer-breathing mode (LBM) vibrations. Our ab initio calculations reveal that the layer-dependent properties arise from both the spin orbit coupling (SOC) and interlayer coupling in different structural symmetries. Such detailed understanding provides useful guidance for future spintronics fabrication using various stacked few-layer MoS2 blocks.
收录类别	SCI
内容类型	期刊论文
源URL	[http://ir.ciomp.ac.cn/handle/181722/55493]
专题	长春光学精密机械与物理研究所_中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Yan, J. X.,J. Xia,X. L. Wang,et al. Stacking-Dependent Interlayer Coupling in Trilayer Mo52 with Broken Inversion Symmetry[J]. Nano Letters,2015,15(12):8155-8161.
APA	Yan, J. X..,J. Xia.,X. L. Wang.,L. Liu.,J. L. Kuo.,...&Z. Liu and Z. X. Shen.(2015).Stacking-Dependent Interlayer Coupling in Trilayer Mo52 with Broken Inversion Symmetry.Nano Letters,15(12),8155-8161.
MLA	Yan, J. X.,et al."Stacking-Dependent Interlayer Coupling in Trilayer Mo52 with Broken Inversion Symmetry".Nano Letters 15.12(2015):8155-8161.