Nanolithography method with controllable critical dimension based on evanescent waves coupling

CORC > 光电技术研究所 > 中国科学院光电技术研究所 > 微电子装备总体研究室（四室）

	Nanolithography method with controllable critical dimension based on evanescent waves coupling
	Zhang, Yukun 1,2,3; Du, Jinglei 1; Yin, Shaoyun 2; Gao, Hongtao 3; Xia, Liangping 2; Shi, Lifang 3; Du, Chunlei 2; Zhang, Zhiyou 1
刊名	Optik
	2014
卷号	125 期号:13 页码:3201-3203
ISSN号	00304026
通讯作者	Zhang, Z. (zhangzhiyou@scu.edu.cn)
中文摘要	We propose a method of generating nanostructures based on evanescent waves coupling. The nanopatterns with ultra-high resolution can be formed by the interference of the evanescent waves between the pattern edges of the mold. Through properly adjusting the width of the mold groove, critical dimension of the nanopatterns can be effectively controlled. The critical dimension of the electric field versus the width of the mold groove is systematically calculated by finite-difference time-domain method. The calculation results demonstrate that through adjusting the geometric parameters of the mold, critical dimension of the electric field can be controlled within the range of 30 nm and 100 nm, and the contrast ratio is above 60%. This method provides an easy way for fabricating nanostructures with various dimensions corresponding to the mold patterns and it maybe useful in the applications such as integrate circuits, ultra-high sensitive sensors, and optical storage. © 2014 Elsevier GmbH.
英文摘要	We propose a method of generating nanostructures based on evanescent waves coupling. The nanopatterns with ultra-high resolution can be formed by the interference of the evanescent waves between the pattern edges of the mold. Through properly adjusting the width of the mold groove, critical dimension of the nanopatterns can be effectively controlled. The critical dimension of the electric field versus the width of the mold groove is systematically calculated by finite-difference time-domain method. The calculation results demonstrate that through adjusting the geometric parameters of the mold, critical dimension of the electric field can be controlled within the range of 30 nm and 100 nm, and the contrast ratio is above 60%. This method provides an easy way for fabricating nanostructures with various dimensions corresponding to the mold patterns and it maybe useful in the applications such as integrate circuits, ultra-high sensitive sensors, and optical storage. © 2014 Elsevier GmbH.
学科主题	Electric fields - Electromagnetic wave reflection - Finite difference time domain method - Nanolithography - Nanostructures
收录类别	SCI ; EI
语种	英语
WOS记录号	WOS:000337656400047
内容类型	期刊论文
源URL	[http://ir.ioe.ac.cn/handle/181551/7304]
专题	光电技术研究所_微电子装备总体研究室（四室）
作者单位	1.Physics Department, Sichuan University, Chengdu, Sichuan Province 610064, China 2.Chongqing Institute of Green and Intelligent of Chinese Academy of Sciences, Chongqing 401122, China 3.Institute of Optics and Electronics, Chinese Academy of Sciences, Chengdu, Sichuan Province 610209, China
推荐引用方式 GB/T 7714	Zhang, Yukun,Du, Jinglei,Yin, Shaoyun,et al. Nanolithography method with controllable critical dimension based on evanescent waves coupling[J]. Optik,2014,125(13):3201-3203.
APA	Zhang, Yukun.,Du, Jinglei.,Yin, Shaoyun.,Gao, Hongtao.,Xia, Liangping.,...&Zhang, Zhiyou.(2014).Nanolithography method with controllable critical dimension based on evanescent waves coupling.Optik,125(13),3201-3203.
MLA	Zhang, Yukun,et al."Nanolithography method with controllable critical dimension based on evanescent waves coupling".Optik 125.13(2014):3201-3203.