Loss of light yield of doped lead tungstate crystals after irradiation

	Loss of light yield of doped lead tungstate crystals after irradiation
	He JT(何景堂); Lv YS(吕雨生); Chen DB(陈端保); Li ZH(李祖豪); Bian JG(卞建国); Zhu GY(朱国义); Tang XW(唐孝威); Zheng LR(郑连荣); Chen XH(陈小红); Ren SX(任绍霞)
刊名	CHINESE PHYSICS LETTERS
	1999
卷号	16 期号:10 页码:745-746
通讯作者	Chinese Acad Sci, Inst High Energy Phys, Beijing 100039, Peoples R China ; Beijing Glass Res Inst, Beijing Inorgan Crystal Lab, Beijing 100062, Peoples R China
英文摘要	Loss of light yield of doped lead tungstate crystals after irradiation with a low dose rate has been observed. The La, Pr, and Y doping may improve radiation hardness, whereas Pi or Mo doping is harmful.
学科主题	Physics
类目[WOS]	Physics, Multidisciplinary
研究领域[WOS]	Physics
原文出处	SCI
语种	英语
WOS记录号	WOS:000083261500016
内容类型	期刊论文
源URL	[http://ir.ihep.ac.cn/handle/311005/238412]
专题	高能物理研究所_院士高能物理研究所_粒子天体物理中心高能物理研究所_多学科研究中心
作者单位	中国科学院高能物理研究所
推荐引用方式 GB/T 7714	He JT,Lv YS,Chen DB,et al. Loss of light yield of doped lead tungstate crystals after irradiation[J]. CHINESE PHYSICS LETTERS,1999,16(10):745-746.
APA	何景堂.,吕雨生.,陈端保.,李祖豪.,卞建国.,...&Ren, SX.(1999).Loss of light yield of doped lead tungstate crystals after irradiation.CHINESE PHYSICS LETTERS,16(10),745-746.
MLA	何景堂,et al."Loss of light yield of doped lead tungstate crystals after irradiation".CHINESE PHYSICS LETTERS 16.10(1999):745-746.