Comparison of valence band x-ray photoelectron spectrum between Al-N-codoped and N-doped ZnO films

	Comparison of valence band x-ray photoelectron spectrum between Al-N-codoped and N-doped ZnO films
	Cong, GW; Peng, WQ; Wei, HY; Han, XX; Wu, JJ; Liu, XL; Zhu, QS; Wang, ZG; Lu, JG; Ye, ZZ
刊名	APPLIED PHYSICS LETTERS
	2006
卷号	88 期号:6 页码:602110
通讯作者	Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China ; Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China ; Chinese Acad Sci, Inst High Energy Phys, Beijing Synchrotron Radiat Facil, Beijing 100039, Peoples R China
英文摘要	The valence band structures of Al-N-codoped [ZnO:(Al, N)] and N-doped (ZnO:N) ZnO films were studied by normal and soft x-ray photoelectron spectroscopy. The valence-band maximum of ZnO:(Al, N) shifts up to Fermi energy level by about 300 meV compared with that of ZnO:N. Such a shift can be attributed to the existence of a kind of Al-N in ZnO:(Al, N), as supported by core level XPS spectra and comparison of modified Auger parameters. Al-N increased the relative quantity of Zn-N in ZnO:(Al, N), while N-N decreased that of Zn-N in ZnO:N. (c) 2006 American Institute of Physics.
学科主题	Physics
类目[WOS]	Physics, Applied
研究领域[WOS]	Physics
原文出处	SCI
语种	英语
WOS记录号	WOS:000235252800055
内容类型	期刊论文
源URL	[http://ir.ihep.ac.cn/handle/311005/241070]
专题	高能物理研究所_多学科研究中心
作者单位	中国科学院高能物理研究所
推荐引用方式 GB/T 7714	Cong, GW,Peng, WQ,Wei, HY,et al. Comparison of valence band x-ray photoelectron spectrum between Al-N-codoped and N-doped ZnO films[J]. APPLIED PHYSICS LETTERS,2006,88(6):602110.
APA	Cong, GW.,Peng, WQ.,Wei, HY.,Han, XX.,Wu, JJ.,...&胡天斗.(2006).Comparison of valence band x-ray photoelectron spectrum between Al-N-codoped and N-doped ZnO films.APPLIED PHYSICS LETTERS,88(6),602110.
MLA	Cong, GW,et al."Comparison of valence band x-ray photoelectron spectrum between Al-N-codoped and N-doped ZnO films".APPLIED PHYSICS LETTERS 88.6(2006):602110.