Study of crystalline structure change of annealing-induced self-organization in polymer field-effect transistors

	Study of crystalline structure change of annealing-induced self-organization in polymer field-effect transistors
	Tian, XY; Zhao, SL; Xu, Z; Yao, JF; Zhang, FJ; Jia, QJ; Chen, Y; Gong, W; Fan, X; Jia QJ(贾全杰)
刊名	ACTA PHYSICA SINICA
	2011
卷号	60 期号:5 页码:57201
关键词	polymer field-effect transistor synchrotron radiation grazing incident X-ray diffraction self-organization annealing
通讯作者	[Tian Xue-Yan ; Zhao Su-Ling ; Xu Zheng ; Zhang Fu-Jun ; Gong Wei ; Fan Xing] Beijing Jiaotong Univ, Minist Educ, Key Lab Luminescence & Opt Informat, Inst Optoelect Technol, Beijing 100044, Peoples R China ; [Yao Jiang-Feng] Beijing Asahi Glass Elect Co Ltd, Beijing 100016, Peoples R China ; [Jia Quan-Jie ; Chen Yu] Chinese Acad Sci, Inst High Energy Phys, Beijing 100049, Peoples R China
英文摘要	With the aim of understanding the relationships between polymer self-organization and charge carrier mobility of polymer organic field-effect transistor (OFET), we investigate crystalline microstructure change of annealing-induced self-organization of regioregular poly (3-hexylthiophene) (RR-P3HT) active thin layer in polymer OFET by synchrotron radiation grazing incident X-ray diffraction (GIXRD). The crystalline microstructures of RR-P3HT thin film with different preparation methods (spin-coating and drop-casting) and different concentrations (2.5 mg/ml and 3.5 mg/ml) at various annealing temperatures are studied. These results present that, the crystalline structures of RR-P3HT active layers annealed at 150 degrees C are better and enhanced to charge transport, which tend to pack form the thiophene rings are perpendicular and the pi-pi interchain stacking parallel to the substrate. Furthermore, we find that an appropriate annealing temperature can facilitate the crystal structure of edge-on form, resulting in field-effect mobility enhancement of polymer OFET.
学科主题	Physics
类目[WOS]	Physics, Multidisciplinary
研究领域[WOS]	Physics
原文出处	SCI
语种	英语
WOS记录号	WOS:000291239700097
内容类型	期刊论文
源URL	[http://ir.ihep.ac.cn/handle/311005/240703]
专题	高能物理研究所_多学科研究中心高能物理研究所_核技术应用研究中心
作者单位	中国科学院高能物理研究所
推荐引用方式 GB/T 7714	Tian, XY,Zhao, SL,Xu, Z,et al. Study of crystalline structure change of annealing-induced self-organization in polymer field-effect transistors[J]. ACTA PHYSICA SINICA,2011,60(5):57201.
APA	Tian, XY.,Zhao, SL.,Xu, Z.,Yao, JF.,Zhang, FJ.,...&陈雨.(2011).Study of crystalline structure change of annealing-induced self-organization in polymer field-effect transistors.ACTA PHYSICA SINICA,60(5),57201.
MLA	Tian, XY,et al."Study of crystalline structure change of annealing-induced self-organization in polymer field-effect transistors".ACTA PHYSICA SINICA 60.5(2011):57201.