Diffusion during growth and annealing of Co/Cu(111) films

	Diffusion during growth and annealing of Co/Cu(111) films
	Su R(苏润); Liu FQ(刘凤琴); Qian HJ(钱海杰); Kui RX(奎热西); Su, R; Liu, FQ; Qian, HJ; Kurash
刊名	ACTA PHYSICA SINICA
	2002
卷号	51 期号:10 页码:2325-2328
关键词	surface diffusion and interfacial compound formation surface energy of solids surface states and band structure
通讯作者	Chinese Acad Sci, Inst High Energy Phys, Synchrotron Radiat Lab, Beijing 100039, Peoples R China
英文摘要	Electronic structure of MBE-grown Co/Cu (111) films was studied by synchrotron radiation angular-resolved photoemission spectra and auger electron spectra during the process of growth and annealing. The experiment reveals that: the energy shift of s-d(z)(2)-hybridized band of copper increases with thickening of the coverage of cobalt, which proves that atomic intermixing occurrs at the interface, and there is mainly surface diffusion, not bulk interdiffusion during annealing. We attribute the diffusion in the two different processes to one driving force, i.e. the surface free energy of cobalt is remarkably larger than that of copper.
学科主题	Physics
类目[WOS]	Physics, Multidisciplinary
研究领域[WOS]	Physics
原文出处	SCI
语种	英语
WOS记录号	WOS:000178899300030
内容类型	期刊论文
源URL	[http://ir.ihep.ac.cn/handle/311005/239719]
专题	高能物理研究所_多学科研究中心
作者单位	中国科学院高能物理研究所
推荐引用方式 GB/T 7714	Su R,Liu FQ,Qian HJ,et al. Diffusion during growth and annealing of Co/Cu(111) films[J]. ACTA PHYSICA SINICA,2002,51(10):2325-2328.
APA	苏润.,刘凤琴.,钱海杰.,奎热西.,Su, R.,...&Kurash.(2002).Diffusion during growth and annealing of Co/Cu(111) films.ACTA PHYSICA SINICA,51(10),2325-2328.
MLA	苏润,et al."Diffusion during growth and annealing of Co/Cu(111) films".ACTA PHYSICA SINICA 51.10(2002):2325-2328.