Investigation of the acceptor and donor in fast neutron irradiated Czochralski silicon

	Investigation of the acceptor and donor in fast neutron irradiated Czochralski silicon
	Li, YX; Yang, S; Chen, GF; Ma, QY; Niu, PJ; Chen, DF; Li, HT; Wang, BY; Wang BY(王宝义)
刊名	ACTA PHYSICA SINICA
	2005
卷号	54 期号:4 页码:1783-1787
关键词	fast neutron irradiation vacancy-type defects acceptor donor
通讯作者	Hebei Univ Technol, Sch Mat Sci & Engn, Tianjin 300130, Peoples R China ; Tianjin Polytech Inst, Sch Informat & Commun, Tianjin 300160, Peoples R China ; China Inst Atom Energy, Beijing 102413, Peoples R China ; Chinese Acad Sci, Inst High Energy Phys, Beijing 100049, Peoples R China
英文摘要	Variations of the irradiated defects, resistivity, carrier mobility ratio and carrier concentration in high-dose neutron-irradiated n-type Czoehralski silicon have been investigated by means of Fourier transform infrared spectrometer, positron annihilation spectroscopy and Hall effect. After irradiated with fast neutron, the sample transformed from n to p-type. Two types of acceptor centers that contribute to the V2O2, V2O, VO2, V-O-V and V-4 -type defects will appear after annealing at temperature of 450 and 600 degrees C, respectively. After annealing at temperatures above 650 degrees C, with the elimination of acceptors, the carrier mobility ratio and the carrier-type began to recover and a type of donor related to the irradiated defects will appear. The effective annealing temperature is 750 degrees C at which the donor is formed, and annealing above 900 degrees C for I It will eliminate the donor.
学科主题	Physics
类目[WOS]	Physics, Multidisciplinary
研究领域[WOS]	Physics
原文出处	SCI
语种	英语
WOS记录号	WOS:000228510600056
内容类型	期刊论文
源URL	[http://ir.ihep.ac.cn/handle/311005/239523]
专题	高能物理研究所_多学科研究中心高能物理研究所_粒子天体物理中心中国科学院高能物理研究所_中国散裂中子源
作者单位	中国科学院高能物理研究所
推荐引用方式 GB/T 7714	Li, YX,Yang, S,Chen, GF,et al. Investigation of the acceptor and donor in fast neutron irradiated Czochralski silicon[J]. ACTA PHYSICA SINICA,2005,54(4):1783-1787.
APA	Li, YX.,Yang, S.,Chen, GF.,Ma, QY.,Niu, PJ.,...&王宝义.(2005).Investigation of the acceptor and donor in fast neutron irradiated Czochralski silicon.ACTA PHYSICA SINICA,54(4),1783-1787.
MLA	Li, YX,et al."Investigation of the acceptor and donor in fast neutron irradiated Czochralski silicon".ACTA PHYSICA SINICA 54.4(2005):1783-1787.