Mosaic structure evolution in GaN films with annealing time grown by metalorganic chemical vapour deposition

	Mosaic structure evolution in GaN films with annealing time grown by metalorganic chemical vapour deposition
	Chen, ZT; Xu, K; Guo LP(郭立平); Guo, LP; Yang, ZJ; Pan, YB; Su, YY; Zhang, H; Shen, B; Zhang, GY
刊名	CHINESE PHYSICS LETTERS
	2006
卷号	23 期号:5 页码:1257-1260
通讯作者	Peking Univ, Sch Phys, Beijing 100871, Peoples R China ; Peking Univ, State Key Lab Artificial Microstruct & Mesoscop P, Beijing 100871, Peoples R China ; Peking Univ, Res Ctr Wide Band Semicond, Beijing 100871, Peoples R China ; Chinese Acad Sci, Inst High Energy Phys, Beijing Synchrotron Radiat Facil, Beijing 100049, Peoples R China
英文摘要	We investigate mosaic structure evolution of GaN films annealed for a long time at 800 degrees C grown on sapphire substrates by metalorganic chemical vapour deposition by high-resolution x-ray diffraction. The result show that residual stress in GaN films is relaxed by generating edge-type threading dislocations (TDs) instead of screw-type TDs. Compared to as-grown GaN films, the annealed ones have larger mean twist angles corresponding to higher density of edge-type TDs but smaller mean tilt angles corresponding to lower density of screw-type TDs films. Due to the increased edge-type TD density, the lateral coherence lengths of the annealed GaN films also decrease. The results obtained from chemical etching experiment and grazing-incidence x-ray diffraction (GIXRD) also support the proposed structure evolution.
学科主题	Physics
类目[WOS]	Physics, Multidisciplinary
研究领域[WOS]	Physics
原文出处	SCI
语种	英语
WOS记录号	WOS:000237551700053
内容类型	期刊论文
源URL	[http://ir.ihep.ac.cn/handle/311005/239232]
专题	高能物理研究所_多学科研究中心
作者单位	中国科学院高能物理研究所
推荐引用方式 GB/T 7714	Chen, ZT,Xu, K,Guo LP,et al. Mosaic structure evolution in GaN films with annealing time grown by metalorganic chemical vapour deposition[J]. CHINESE PHYSICS LETTERS,2006,23(5):1257-1260.
APA	Chen, ZT.,Xu, K.,郭立平.,Guo, LP.,Yang, ZJ.,...&Zhang, GY.(2006).Mosaic structure evolution in GaN films with annealing time grown by metalorganic chemical vapour deposition.CHINESE PHYSICS LETTERS,23(5),1257-1260.
MLA	Chen, ZT,et al."Mosaic structure evolution in GaN films with annealing time grown by metalorganic chemical vapour deposition".CHINESE PHYSICS LETTERS 23.5(2006):1257-1260.