Crack control in GaN grown on silicon (111) using In doped low-temperature AlGaN interlayer by metalorganic chemical vapor deposition

	Crack control in GaN grown on silicon (111) using In doped low-temperature AlGaN interlayer by metalorganic chemical vapor deposition
	Wu, JJ; Han, XX; Li, JM; Wei, HY; Cong, GW; Liu, XL; Zhu, QS; Wang, ZG; Jia, QJ; Guo, LP
刊名	OPTICAL MATERIALS
	2006
卷号	28 期号:10 页码:1227-1231
关键词	in doping cracks Si(111) substrate LT-AlGaN interlayer metalorganic chemical vapor deposition GaN
通讯作者	Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China ; Chinese Acad Sci, Inst High Energy Phys, Beijing 100039, Peoples R China
英文摘要	The effects of In doped low-temperature (LT) AlGaN interlayer on the properties of GaN/Si(111) by MOCVD have been investigated. Using In doping LT-interlayer can decrease the stress sufficiently for avoiding crack formation in a thick (2.0 mu m) GaN layer. Significant improvement in the crystal and optical properties of GaN layer is also achieved. In doping is observed to reduce the stress in AlGaN interlayer measured by high-resolution X-ray diffraction (HRXRD). It can provide more compressive stress to counteract tensile stress and reduce crack density in subsequent GaN layer. Moreover, as a surfactant, indium is observed to cause an enhanced PL intensity and the narrowed linewidths of PL and XRD spectra for the LT-interlayer. Additionally, the crystal quality of GaN layer is found to be dependent on the growth parameters of underneath In-doped LT-AlGaN interlayer. The optimal parameters, such as TMIn flow rate, TMAl flow rates and thickness, are achieved to obtain nearly 2.0 mu m thick crack free GaN film with advanced optical and crystal properties. (c) 2005 Elsevier B.V. All rights reserved.
学科主题	Materials Science; Optics
类目[WOS]	Materials Science, Multidisciplinary ; Optics
研究领域[WOS]	Materials Science ; Optics
原文出处	SCI
语种	英语
WOS记录号	WOS:000238884000017
内容类型	期刊论文
源URL	[http://ir.ihep.ac.cn/handle/311005/239205]
专题	高能物理研究所_多学科研究中心中国科学院高能物理研究所_中国散裂中子源
作者单位	中国科学院高能物理研究所
推荐引用方式 GB/T 7714	Wu, JJ,Han, XX,Li, JM,et al. Crack control in GaN grown on silicon (111) using In doped low-temperature AlGaN interlayer by metalorganic chemical vapor deposition[J]. OPTICAL MATERIALS,2006,28(10):1227-1231.
APA	Wu, JJ.,Han, XX.,Li, JM.,Wei, HY.,Cong, GW.,...&王焕华.(2006).Crack control in GaN grown on silicon (111) using In doped low-temperature AlGaN interlayer by metalorganic chemical vapor deposition.OPTICAL MATERIALS,28(10),1227-1231.
MLA	Wu, JJ,et al."Crack control in GaN grown on silicon (111) using In doped low-temperature AlGaN interlayer by metalorganic chemical vapor deposition".OPTICAL MATERIALS 28.10(2006):1227-1231.