Photoluminescence study of the defects induced by neutron irradiation and rapid annealing in semi-insulating GaAs

	Photoluminescence study of the defects induced by neutron irradiation and rapid annealing in semi-insulating GaAs
	Liu J(刘键); Liu, JA; Wang, PX
刊名	JOURNAL OF APPLIED PHYSICS
	1999
卷号	86 期号:2 页码:764-767
通讯作者	Acad Sinica, Inst High Energy Phys, Beijing 100080, Peoples R China ; Univ Sci & Technol Beijing, Dept Mat Phys, Beijing 100083, Peoples R China
英文摘要	The rapid annealing behavior of several kinds of defects in semi-insulating GaAs irradiated with various neutron fluences has been characterized using a photoluminescence technique. In this experiment, transmutation impurities form not only donors, but also acceptors, Ge-As (the 1.4783 eV peak). The intensity ratio of the 1.4783 eV peak (Ge-As) to the 1.4917 eV peak (C-As) increases with the neutron dose. This finding is consistent with the expected increase of Ge-As produced by transmutation. We also see that short time heat treatment leads to the increase of antisite defects Ga-As and of complex centers I-Ga-V-As after neutron irradiation. Based on analysis of the rapid annealing process in comparison with the regular annealing process, it is concluded that the two kinds of defects Ga-As and I-Ga-V-As are the products of defect reactions during the annealing process. (C) 1999 American Institute of Physics. [S0021-8979(99)02614-6].
学科主题	Physics
类目[WOS]	Physics, Applied
研究领域[WOS]	Physics
原文出处	SCI
语种	英语
WOS记录号	WOS:000081171800009
内容类型	期刊论文
源URL	[http://ir.ihep.ac.cn/handle/311005/238443]
专题	高能物理研究所_多学科研究中心
作者单位	中国科学院高能物理研究所
推荐引用方式 GB/T 7714	Liu J,Liu, JA,Wang, PX. Photoluminescence study of the defects induced by neutron irradiation and rapid annealing in semi-insulating GaAs[J]. JOURNAL OF APPLIED PHYSICS,1999,86(2):764-767.
APA	刘键,Liu, JA,&Wang, PX.(1999).Photoluminescence study of the defects induced by neutron irradiation and rapid annealing in semi-insulating GaAs.JOURNAL OF APPLIED PHYSICS,86(2),764-767.
MLA	刘键,et al."Photoluminescence study of the defects induced by neutron irradiation and rapid annealing in semi-insulating GaAs".JOURNAL OF APPLIED PHYSICS 86.2(1999):764-767.