Influence of RF power on the structure of ZnS thin films grown by sulfurizing RF sputter deposited ZnO

	Influence of RF power on the structure of ZnS thin films grown by sulfurizing RF sputter deposited ZnO
	Zhang, RG; Wang BY(王宝义); Wei L(魏龙); Wang, BY; Wei, L
刊名	MATERIALS CHEMISTRY AND PHYSICS
	2008
卷号	112 期号:2 页码:557-561
关键词	ZnS thin films Sputtering Sulfidation
通讯作者	[Zhang, Rengang] Wuhan Univ Sci & Technol, Dept Appl Phys, Wuhan 430081, Peoples R China ; [Wang, Baoyi ; Wei, Long] Chinese Acad Sci, Inst High Energy Phys, Beijing 100049, Peoples R China
英文摘要	ZnS thin films with a c-axis preferred orientation have been prepared by sulfurizing the RF reactive sputter deposited ZnO thin films at 500 degrees C in sulfur vapor. These thin films have been characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), UV-visible transmission spectra and Auger electron spectroscopy (AES). It is found that the degree of c-axis Orientations of ZnO and ZnS thin films increases with enhancing RF power. Also, the sulfurized thin films have markedly greater grains than the as-deposited films, mainly due to recrystallization of ZnS in sulfur vapor. The grain size for the ZnS films increases from similar to 200 to similar to 500 nm with enhancing RF power from 80 to 120W. A reason for this is that in the case of the greater RF power, high compactness of the films will be very beneficial to the grain growth. Additionally, the excess sulfur can be absorbed on the grain surface of the ZnS film produced by 22 h sulfidation. This will cause the great broadening of absorption edge in the optical transmittance. (C) 2008 Elsevier B.V. All rights reserved.
学科主题	Materials Science
类目[WOS]	Materials Science, Multidisciplinary
研究领域[WOS]	Materials Science
原文出处	SCI
语种	英语
WOS记录号	WOS:000261022200046
内容类型	期刊论文
源URL	[http://ir.ihep.ac.cn/handle/311005/237935]
专题	高能物理研究所_多学科研究中心
作者单位	中国科学院高能物理研究所
推荐引用方式 GB/T 7714	Zhang, RG,Wang BY,Wei L,et al. Influence of RF power on the structure of ZnS thin films grown by sulfurizing RF sputter deposited ZnO[J]. MATERIALS CHEMISTRY AND PHYSICS,2008,112(2):557-561.
APA	Zhang, RG,王宝义,魏龙,Wang, BY,&Wei, L.(2008).Influence of RF power on the structure of ZnS thin films grown by sulfurizing RF sputter deposited ZnO.MATERIALS CHEMISTRY AND PHYSICS,112(2),557-561.
MLA	Zhang, RG,et al."Influence of RF power on the structure of ZnS thin films grown by sulfurizing RF sputter deposited ZnO".MATERIALS CHEMISTRY AND PHYSICS 112.2(2008):557-561.