Blue-shift photoluminescence from porous InAlAs

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	Blue-shift photoluminescence from porous InAlAs
	Jiang YC (Jiang Y. C.) ; Liu FQ (Liu F. Q.) ; Wang LJ (Wang L. J.) ; Yin W (Yin W.) ; Wang ZG (Wang Z. G.)
刊名	semiconductor science and technology
	2010
卷号	25 期号:11 页码:art. no. 115006
关键词	MACROPOROUS SILICON PORE FORMATION GAP INP AL0.48IN0.52AS NANOSTRUCTURES MORPHOLOGY
通讯作者	jiang, yc, chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china. e-mail address: fqliu@semi.ac.cn
合作状况	其它
英文摘要	a porous inalas structure was first obtained by electrochemical etching. nano-pore arrays were formed when the in0.52al0.48as membrane was anodized at constant voltages in an hf aqueous solution. these self-assembled structures showed evident blue-shift photoluminescence emissions. while a quantum size effect alone underestimates the blue-shift energy for a sample with a relatively large average pore wall thickness, a novel effect caused by the asymmetric etching is proposed to account for this phenomenon. the results inferred from the x-ray double crystal diffraction are in good agreement with the experimental data.; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-12-28t00:30:24z no. of bitstreams: 1 blue-shift photoluminescence from porous inalas.pdf: 699726 bytes, checksum: f56d3ba28ee77d143a20f12e67aa5109 (md5); approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-12-28t00:59:28z (gmt) no. of bitstreams: 1 blue-shift photoluminescence from porous inalas.pdf: 699726 bytes, checksum: f56d3ba28ee77d143a20f12e67aa5109 (md5); made available in dspace on 2010-12-28t00:59:28z (gmt). no. of bitstreams: 1 blue-shift photoluminescence from porous inalas.pdf: 699726 bytes, checksum: f56d3ba28ee77d143a20f12e67aa5109 (md5) previous issue date: 2010; this work was supported by the national research projects of china (grant numbers are 60525406, 60736031, 60806018, 60906026, 2006cb604903, 2007aa03z446 and 2009aa03z403, respectively). the authors would like to thank x l zhou for useful discussion and an anonymous reviewer of journal of applied physics for helpful suggestions.; 其它
学科主题	半导体材料
收录类别	SCI
资助信息	this work was supported by the national research projects of china (grant numbers are 60525406, 60736031, 60806018, 60906026, 2006cb604903, 2007aa03z446 and 2009aa03z403, respectively). the authors would like to thank x l zhou for useful discussion and an anonymous reviewer of journal of applied physics for helpful suggestions.
语种	英语
公开日期	2010-12-28
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/20680]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Jiang YC ,Liu FQ ,Wang LJ ,et al. Blue-shift photoluminescence from porous InAlAs[J]. semiconductor science and technology,2010,25(11):art. no. 115006.
APA	Jiang YC ,Liu FQ ,Wang LJ ,Yin W ,&Wang ZG .(2010).Blue-shift photoluminescence from porous InAlAs.semiconductor science and technology,25(11),art. no. 115006.
MLA	Jiang YC ,et al."Blue-shift photoluminescence from porous InAlAs".semiconductor science and technology 25.11(2010):art. no. 115006.